@article{Grodecki_Kacper_Fast_2017,
 author={Grodecki, Kacper and Martyniuk, Piotr and Kopytko, Małgorzata and Kowalewski, Andrzej and Stępień, Dawid and Kębłowski, Artur and Piotrowski, Adam and Piotrowski, Józef and Gawron, Waldemar and Rogalski, Antoni},
 howpublished={online},
 year={2017},
 abstract={<p>
 In this work we report simulation and experimental results for an MWIR 
 HgCdTe photodetector designed by computer simulation and fabricated in a 
 joint laboratory run by VIGO Sytems S.A. and Military University of 
 Technology. The device is based on a modified N+pP+ heterostructure 
 grown on 2&#8221;., epiready, semi-insulating (100) GaAs substrates in a 
 horizontal MOCVD AIX 200 reactor.
 </p>
 <p>
 
 </p>
 <p>
 The devices were examined by measurements of spectral and time responses 
 as a function of a bias voltage and operating temperatures. The time 
 response was measured with an Optical Parametric Oscillator (OPO) as the 
 source of ~25 ps pulses of infrared radiation, tuneable in a 1.55&#8211;16 &#956;m 
 spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 &#956;m 
 cut-off wavelength were characterized by 1.6 &#215; 1012 cm Hz1/2/W peak 
 detectivity and &lt; 1 ns time constant for V &gt; 500 mV.
 </p>},
 type={Artykuły / Articles},
 title={Fast Response Hot (111) HGCDTE MWIR Detectors},
 volume={vol. 24},
 number={No 3},
 pages={509–514},
 journal={Metrology and Measurement Systems},
 publisher={Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation},
 doi={10.1515/mms-2017-0044},
 keywords={HgCdTe, MWIR, photodetector, Response Time},
}