@ARTICLE{Michalczewski_K._Demonstration_2019, author={Michalczewski, K. and Tsai, T.Y. and Martyniuk, P. and Wu, C.H.}, volume={67}, number={No. 1}, journal={Bulletin of the Polish Academy of Sciences Technical Sciences}, pages={141-145}, howpublished={online}, year={2019}, abstract={We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 µm and 6 µm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K.}, type={Artykuły / Articles}, title={Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors}, URL={http://www.journals.pan.pl/Content/111108/PDF/15_141-146_00805_Bpast.No.67-1_06.02.20.pdf}, doi={10.24425/bpas.2019.127343}, keywords={HOT, MWIR T2SLs InAs/InAsSb, photoresistor}, }