@ARTICLE{Bugajski_M._High_2005,
 author={Bugajski, M. and Mroziewicz, B. and Regiński, K. and Muszalski, J. and Kosiel, K. and Zbroszczyk, M. and Ochalski, T. and Piwoński, T. and Wawer, D. and Szerling, A. and Kowalczyk, E. and Wrzesińska, H. and Górska, M.},
 volume={vol. 53},
 number={No 2},
 journal={Bulletin of the Polish Academy of Sciences Technical Sciences},
 pages={113-122},
 howpublished={online},
 year={2005},
 abstract={Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth ≈ 280 A/cm2 (for the resonator length L = 700 um) and differential efficiency η= 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters, obtained by numerical modelling of devices were Jth ≈ 210 A/cm and η = 0.47 W/A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 1500 hrs of CW operation at 35oC heat sink temperature at the constant optical power (50 mW) conditions.},
 type={Artykuły / Articles},
 title={High power QW SCH InGaAs/GaAs lasers for 980-nm band},
 URL={http://www.journals.pan.pl/Content/111759/PDF/(53-2)113.pdf},
 keywords={laser diodes, strained-layer semiconductor lasers},
}