TY - JOUR N2 - This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density. L1 - http://www.journals.pan.pl/Content/115161/PDF/15_147-154_01382_Bpast.No.68-1_28.02.20_K1_OK.pdf L2 - http://www.journals.pan.pl/Content/115161 PY - 2020 IS - No. 1 EP - 154 DO - 10.24425/bpasts.2020.131834 KW - edge-emitting lasers KW - InGaN/GaN KW - computer simulation KW - ITO KW - optical confinement A1 - Kuc, M. A1 - Sokół, A.K. A1 - Piskorski, Ł. A1 - Dems, M. A1 - Wasiak, M. A1 - Sarzała, R.P. A1 - Czyszanowski, T. VL - 68 DA - 29.02.2020 T1 - ITO layer as an optical confinement for nitride edge-emitting lasers SP - 147 UR - http://www.journals.pan.pl/dlibra/publication/edition/115161 T2 - Bulletin of the Polish Academy of Sciences Technical Sciences ER -