TY - JOUR N2 - One of the key parameters determining detection properties of silicon PIN detector structures (p+-ν-n+ or n+-ν-p+) is minority carrier diffusion length in p-n junction regions p-n (p+-ν or n+-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors. The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ1 = 500 nm (silicon penetration depth of around 0.9 μm) and λ2 = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents. L1 - http://www.journals.pan.pl/Content/116149/PDF/opelre_2015_34.pdf L2 - http://www.journals.pan.pl/Content/116149 PY - 2015 IS - No 4 EP - 270 KW - effective minority diffusion length KW - surface recombination velocity KW - epiplanar detector KW - p-n structures A1 - Piotrowski, T. A1 - Węgrzecki, M. A1 - Stolarski, M. A1 - Gościński, K. A1 - Krajewski, T. PB - Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology VL - vol. 23 DA - 07.10.2015 T1 - Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures SP - 265 UR - http://www.journals.pan.pl/dlibra/publication/edition/116149 T2 - Opto-Electronics Review ER -