The following paper presents the players profiling methodology applied to the turn-based computer game in the audience-driven system. The general scope are mobile games where the players compete against each other and are able to tackle challenges presented by the game engine. As the aim of the game producer is to make the gameplay as attractive as possible, the players should be paired in a way that makes their duel the most exciting. This requires the proper player profiling based on their previous games. The paper presents the general structure of the system, the method for extracting information about each duel and storing them in the data vector form and the method for classifying different players through the clustering or predefined category assignment. The obtained results show the applied method is suitable for the simulated data of the gameplay model and clustering of players may be used to effectively group them and pair for the duels.

The electronic, optical and thermoelectric properties of MoS2 nano-sheet in presence of the Ru impurity have been calculated by density functional theory framework with Generalized Gradient approximation. The MoRuS2 nano-sheet electronic structure was changed to the n-type semiconductor by 1.3 eV energy gap. The optical coefficients were shown that the loosing optical energy occurred in the higher ultraviolet region, so this compound is a promising candidate for optical sensing in the infrared and visible range. The thermoelectric behaviors were implied to the good merit parameter in the 100K range and room temperatures and also has high amount of power factor in 600K which made it for power generators applications.

In this work studies of barrier height local values are presented. Distribution of the gate-oxide EBG(x, y) and semiconductor-oxide EBS(x, y) barrier height local values have been determined using the photoelectric measurement methods. Two methods were used to obtain the local values of the barrier heights: modified Powell-Berglund method and modified Fowler method. Both methods were modified in such a way as to allow determination of the EBG(x, y) and EBS(x, y) distribution over the gate area using a focused UV light beam of a small diameter d = 0.3 mm. Measurements have been made on a series of Al-SiO2-Si(n+) MOS structures with semitransparent (tAl = 35 nm) square aluminum gate (1 x 1 mm2). It has been found that the EBG(x, y) distribution has a characteristic dome-like shape, with highest values at the center of the gate, lower at the gate edges and still lower at gate corners. On the contrary, the EBS(x, y) distribution is of a random character. Also, in this paper, both barrier height measurements have been compared with the photoelectric effective contact potential difference fMS(x, y) measurements. These results show good agreement between distribution of the barrier heights EBG(x, y) and EBS(x, y) measurements and independently determined shape of the effective contact potential difference fMS(x, y) distribution.