Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
Graphene is a very promising material for potential applications in many fields. Since manufacturing technologies of graphene are still at the developing stage, low-frequency noise measurements as a tool for evaluating their quality is proposed. In this work, noise properties of polymer thick-film resistors with graphene nano-platelets as a functional phase are reported. The measurements were carried out in room temperature. 1/f noise caused by resistance fluctuations has been found to be the main component in the specimens. The parameter values describing noise intensity of the polymer thick-film specimens have been calculated and compared with the values obtained for other thick-film resistors and layers used in microelectronics. The studied polymer thick-film specimens exhibit rather poor noise properties, especially for the layers with a low content of the functional phase.