In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of the areas of the double-zone JTE (space-modulated JTE). The influence of geometry and the level of p-type doping in the JTE area as well as the charge at the interface between the p-type JTE area and the passivation layer on the diode breakdown voltage was studied. The effect of statistical dispersion of drift layer parameters (thickness, doping level) on diodes breakdown voltage with various JTE structures was investigated as well. The obtained results showed that the breakdown volatge values for a diode with single zone JTE are very sensitive both to the dose of JTE area and charge accumulated at the JTE/dielectric interface. The use of a double zone or space-modulated JTE structures allows for obtaining breakdown voltage above 1.7 kV for a much wider range of doping parameters and with better tolerance to positive charge at the JTE/dielectric interface, as well as better tolerance to statistical dispersion of active layer parameters compared to a single zone JTE structure.

In this paper we present the current status of modelling the time evolution of the transient conductivity of photoexcited semi-insulating (SI) 4H–SiC taking into account the properties of defect centres. A comprehensive model that includes the presence of six, the most significant, point defects occurring in SI 4H–SiC crystals is presented. The defect centres are attributed to the two kinds of nitrogen-related shallow donors, a boron-related shallow acceptor, deep electron and hole traps, and the Z_1/2 recombination centre. We present the results of the state-of-the-art numerical simulations showing how the photoconductivity transients change in time and how these changes are affected by the properties of defect centres. The properties of defect centres assumed for modelling are compared with the results of experimental studies of deep-level defects in high purity (HP) SI 4H–SiC wafers performed by the high-resolution photoinduced transient spectroscopy (HRPITS). The simulated photoconductivity transients are also compared with the experimental photocurrent transients for the HP SI 4H–SiC wafers with different deep-level defects. It is shown that a high-temperature annealing producing the C-rich material enables the fast photocurrent transients to be achieved. The presented analysis can be useful for technology of SI 4H–SiC high-power photoconductive switches with suitable characteristics.