Photoluminescence of HgCdTe epitaxial films and nanostructures and electroluminescence of InAs(Sb,P) light-emitting diode (LED) nanoheterostructures were studied. For HgCdTe-based structures, the presence of compositional fluctuations, which localized charge carriers, was established. A model, which described the effect of the fluctuations on the rate of the radiative recombination, the shape of luminescence spectra and the position of their peaks, was shown to describe experimental photoluminescence data quite reasonably. For InAs(Sb,P) LED nanoheterostructures, at low temperatures (4.2–100 K) stimulated emission was observed. This effect disappeared with the temperature increasing due to the resonant ‘switch-on’ of the Auger process involving transition of a hole to the spin-orbit-splitted band. Influence of other Auger processes on the emissive properties of the nanoheterostructures was also observed. Prospects of employing II–VI and III–V nanostructures in light-emitting devices operating in the mid-infrared part of the spectrum are discussed.
In this work, three ceramic composite coatings Al2O3-3TiO2 C, Al2O3-13TiO2 C, and Al2O3-13TiO2 N were plasma sprayed on steel substrates. They were deposited with two conventional powders differing the volume fraction of TiO2 and nanostructured powder. The mechanical and tribological properties of the coatings were investigated and compared. The increase in TiO2 content from 3 wt.% to 13 wt.% in the conventional feedstock improved the mechanical properties and abrasion resistance of coatings. However, the size of the used powder grains had a much stronger influence on the properties of deposited coatings than the content of the titania phase. The Al2O3-13TiO2 coating obtained from nanostructured powder revealed significantly better properties than that plasma sprayed using conventional powder, i.e. 22% higher microhardness, 19% lower friction coefficient, and over twice as good abrasive wear resistance. In turn, the Al2O3-13TiO2 conventional coating showed an increase in microhardness and abrasive wear resistance, 36% and 43%, respectively, and 6% higher coefficient of friction compared to the Al2O3-3TiO2 conventional coating.
Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.
The electron field and photo-field emission from GaN nanostructures has been analyzed in this review. In order to explain the obtained experimental results, a model was proposed taking into account the change in carrier concentration distribution in the main and the satellite valley during the emission process. The lowering of work function (due to the increased number of carriers in the satellite valley) can explain the decrease in the Fowler-Nordheim plot slope. It was shown that the energy difference between the main and satellite valley in GaN was decreased in the case of quantum confinement, thus increasing the probability of electron transition from Γ to X valley at same electric fields.
Investigations of electron photo-field emission demonstrated that the Fowler–Nordheim plots of the emission current have different slopes for nonilluminated and illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination the emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band.