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Abstract

The compositional graded quaternary barriers (GQBs) instead of ternary/conventional quantum barriers (QBs) have been used to numerically enhance the efficiency of AlGaN-based ultraviolet light-emitting diode (LED). The performance of LED with GQBs is examined through carrier concentrations, energy band diagrams, radiative recombination, electron and hole flux, internal quantum efficiency (IQE), and emission spectrum. As a function of the operating current density, a considerable reduction in efficiency droop is observed in the device with composition-graded quaternary barriers as compared to the conventional structure. The efficiency droop in case of a conventional LED is ~77% which decreased to ~33% in case of the proposed structure. Moreover, the concentration of electrons and holes across the active region in case of the proposed structure is increased to ~156% and ~44%, respectively.
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Bibliography

  1. Würtele, M. et al. Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection. Water Res. 45, 1481–1489 (2011), https://doi.org/10.1016/j.watres.2010.11.015
  2. Khan, A., Balakrishnan, K. & Katona, T. Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photonics 2, 77–84 (2008), https://doi.org/10.1038/nphoton.2007.293
  3. Usman, M., Malik, S. & Munsif, M. AlGaN-based ultraviolet light-emitting diodes: Challenges and Opportunities. Luminescence 36, 294–305 (2021), https://doi.org/10.1002/bio.3965
  4. Hirayama, H., Maeda, N., Fujikawa, S., Toyoda, S. & Kamata, N. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 53, 100209 (2014), http://doi.org/10.7567/JJAP.53.100209
  5. Kneissl, M. A brief review of III-nitride UV emitter technologies and their applications. in III-Nitride Ultraviolet Emitters: Technology and Applications. Springer Series in Materials Science, vol 227. (eds. Kneissl, M. & Rass, J.) 1–25 (Springer Cham, 2016). https://doi.org/10.1007/978-3-319-24100-5_1
  6. Usman, M., Malik, S., Khan, M. A. & Hirayama, H. Suppressing the efficiency droop in AlGaN-based UVB LEDs. Nanotechnology 32, 215703 (2021), https://doi.org/10.1088/1361-6528/abe4f9
  7. Heilingloh, C. S. et al. Susceptibility of SARS-CoV-2 to UV irradiation. Am. J. Infect. Control 48, 1273¬1275 (2020), https://doi.org/10.1016/j.ajic.2020.07.031
  8. Khan, M. A., Shatalov, M., Maruska, H., Wang, H. & Kuokstis, E. III–nitride UV devices. Jpn. J. Appl. Phys. 44, 7191 (2005), https://doi.org/10.1143/jjap.44.7191
  9. Kneissl, M. et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond. Sci. Technol. 26, 014036 (2010), https://doi.org/10.1088/0268-1242/26/1/014036
  10. Shatalov, M. et al. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%. Appl. Phys. Express 5, 082101 (2012), https://doi.org/10.1143/apex.5.082101
  11. Pernot, C. et al. Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes. Phys. Status Solidi A 208, 1594–1596 (2011), https://doi.org/10.1002/pssa.201001037
  12. Huang, C., Zhang, H. & Sun, H. Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system. Nano Energy, 77, 105149 (2020), https://doi.org/10.1016/j.nanoen.2020.105149
  13. Chen, K. et al. Effect of dislocations on electrical and optical properties of n-type Al 0.34 Ga 0.66 N. Appl. Phys. Lett. 93, 192108 (2008), https://doi.org/10.1063/1.3021076
  14. Hirayama, H., Tsukada, Y., Maeda, T. & Kamata, N. Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer. Appl. Phys. Express 3, 031002 (2010), https://doi.org/10.1143/apex.3.031002
  15. Huang, M.-F. & Lu, T.-H. Optimization of the active-layer structure for the deep-UV AlGaN light-emitting diodes. IEEE J. Quantum Electron. 42, 820–826 (2006), https://doi.org/10.1109/JQE.2006.877217
  16. Lu, L. et al. Improving performance of algan‐based deep‐ultraviolet light‐emitting diodes by inserting a higher Al‐content algan layer within the multiple quantum wells. Phys. Status Solidi A 214, 1700461 (2017), https://doi.org/10.1002/pssa.201700461
  17. Arif, R. A., Ee, Y. K. & Tansu, N. Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm. Phys. Status Solidi A 205, 96–100 (2008), https://doi.org/10.1002/pssa.200777478
  18. Usman, M. et al. Zigzag-shaped quantum well engineering of green light-emitting diode. Superlattices Microstruct. 132, 106164, (2019) https://doi.org/10.1016/j.spmi.2019.106164
  19. Usman, M. et al. Enhanced internal quantum efficiency of bandgap-engineered green W-shaped quantum well light-emitting diode. Appl. Sci. 9, 77 (2019), https://doi.org/10.3390/app9010077
  20. Yang, G. et al. Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells. Physica E 62, 55–58 (2014), https://doi.org/10.1016/j.physe.2014.04.014
  21. Zhang, Y. et al. The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers. Superlattices Microstruct. 82, 151–157 (2015), https://doi.org/10.1016/j.spmi.2015.02.004
  22. Li, Y. et al. Advantages of AlGaN-based 310-nm UV light-emitting diodes with Al content graded AlGaN electron blocking layers. IEEE Photonics J. 5, 8200309–8200309 (2013), https://doi.org/10.1109/JPHOT.2013.2271718
  23. Fan, X. et al. Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer. Superlattices Microstruct. 88, 467–473 (2015), https://doi.org/10.1016/j.spmi.2015.10.003
  24. Huang, J. et al. Study of deep ultraviolet light-emitting diodes with ap-AlInN/AlGaN superlattice electron-blocking layer. J. Electron. Mater. 46, 4527–4531 (2017), https://doi.org/10.1007/s11664-017-5413-0
  25. Usman, M., Jamil, T., Malik, S. & Jamal, H. Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency. Optik 232, 166528 (2021). https://doi.org/10.1016/j.ijleo.2021.166528
  26. Zhang, X. et al. Efficiency improvements in AlGaN-based deep-ultraviolet light-emitting diodes with graded superlattice last quantum barrier and without electron blocking layer. J. Electron. Mater. 48, 460–466 (2019). https://doi.org/10.1007/s11664-018-6716-5
  27. Li, K., Zeng, N., Liao, F. & Yin, Y. Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect. Superlattices Microstruct. 145, 106601 (2020). https://doi.org/10.1016/j.spmi.2020.106601
  28. Shatalov, M. et al. Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells. IEEE J. Sel. Top. Quantum Electron. 8, 302–309 (2002). https://doi.org/10.1109/2944.999185
  29. Chen, X., Wang, D. & Fan, G. Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with AlInGaN/AlInGaN super-lattice electron blocking layer. J. Electron. Mater. 48, 2572–2576 (2019). https://doi.org/10.1007/s11664-019-07001-3
  30. Kim, S. J. & Kim, T. G. Numerical study of enhanced performance in InGaN light-emitting diodes with graded-composition AlGaInN barriers. J. Opt. Soc. Korea 17, 16-21 (2013) . https://doi.org/10.3807/JOSK.2013.17.1.016
  31. Adivarahan, V. et al. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells. Appl. Phys. Lett. 79, 4240–4242 (2001). https://doi.org/10.1063/1.1425453
  32. Chen, C. et al. Pulsed metalorganic chemical vapor deposition of quaternary AlInGaN layers and multiple quantum wells for ultraviolet light emission. Jpn. J. Appl. Phys. 41, 1924 (2002). https://doi.org/10.1143/jjap.41.1924
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Authors and Affiliations

Shahzeb Malik
1
Muhammad Usman
1
ORCID: ORCID
Masroor Hussain
2
Munaza Munsif
1
Sibghatullah Khan
1
Saad Rasheed
1
Shazma Ali
1

  1. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
  2. Faculty of Computer Sciences and Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
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Abstract

Magnetoabsorption in far and mid IR ranges in double HgTe/CdHgTe quantum wells with inverted band structure has been studied in high magnetic fields up to 30 T. Numerous intraband and interband transitions have been revealed in the spectra and interpreted within axial 8 × 8 k·p model. Splitting of dominant magnetoabsorption lines resulting from optical transitions from hole-like zero-mode Landau level has been discovered and discussed in terms of a built-in electric field and collective phenomena.

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Authors and Affiliations

L.S. Bovkun
A.V. Ikonnikov
V.Ya. Aleshkin
K.V. Maremyanin
N.N. Mikhailov
S.A. Dvoretskii
S.S. Krishtopenko
F. Teppe
B.A. Piot
M. Potemski
M. Orlita
V.I. Gavrilenko
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Abstract

Transport, photoluminescence, THz transmission, and optically detected cyclotron resonance studies were carried out on samples with a single modulation-doped CdTe/Cd 1-xMg xTe quantum well. THz experiments were performed at liquid helium temperatures for photon energies between about 0.5 meV and 3.5 meV. An effective mass of electron was determined to be (0.1020±0.0003)m 0. Observed photoluminescence and optically detected cyclotron resonance spectra cannot be explained within the simple model of Landau quantization of parabolic bands.
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Authors and Affiliations

Jerzy Łusakowski
1
ORCID: ORCID
Maciej Zaremba
1
Adam Siemaszko
1
Krzysztof Karpierz
1
Zbigniew Adamus
2 3
ORCID: ORCID
Tomasz Wojtowicz
4
ORCID: ORCID

  1. Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
  2. Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
  3. International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
  4. International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
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Abstract

Terahertz (THz) transmission, photoresistance, and electrical conductivity experiments were carried out at 4.2 K on a sample with modulation-doped CdTe/Cd 1-xMg xTe multiple quantum wells. The measurements were carried out as a function of a magnetic field B up to 9 T and a radiation frequency between 0.1 and 0.66 THz. A broad minimum in the transmission curve was observed at magnetic fields corresponding to the cyclotron resonance at given THz frequency which was followed at larger fields by an oscillatory signal, periodic in B −1. Shubnikov-de Haas oscillations were observed in magnetoconductivity and in photoresistance. Each of these experimental signals revealed the same electron concentration equal to (1.01 ± 0.03) ∙1012 cm −2. THz spectroscopy results are compared with data obtained on a single quantum well and are discussed from the point of view of using such multiple quantum wells as THz optical elements.
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Authors and Affiliations

Jerzy Łusakowski
1 2
ORCID: ORCID
Andrzej Frączak
1
Mikołaj Grymuza
1
Eryk Imos
1
Adam Siemaszko
1
Wiktoria Solarska
1
Aniela Woyciechowska
1
Maciej Zaremba
1
Rafał Zdunek
1
Krzysztof Karpierz
1
Zbigniew Adamus
3 4
ORCID: ORCID
Tomasz Słupiński
3 4
ORCID: ORCID
Tomasz Wojtowicz
3
ORCID: ORCID

  1. Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
  2. CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
  3. International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
  4. Institute of Physics,Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland

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