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Number of results: 76
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Abstract

In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
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Authors and Affiliations

G. Kulesza-Matlak
K. Gawlińska
Z. Starowicz
A. Sypień
K. Drabczyk
B. Drabczyk
M. Lipiński
P. Zięba
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Abstract

Perovskite solar cells represent the biggest breakthrough in photovoltaics in decades, bringing a chance for affordable and widely available green energy. They are suitable in areas where silicon cells have fallen short.
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Authors and Affiliations

Olaf Szewczyk
1

  1. Saule Technologies in Warsaw
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Abstract

A superior SiC based thermal protection coating process for carbon composite, which can be especially effective in a hot oxidizing atmosphere, was established in this study. A multi-coating process based on a combination of Chemical Vapor Reaction (CVR) and Chemical Vapor Deposition (CVD) was developed. Various protective coating layers on carbon composite were tested in hot oxidizing surroundings and the test results verified that the thermal ablation rate could be dramatically reduced down to 3.8% when the protective multi-coating was applied. The thermal protection mechanism of the coating layers was also investigated.

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Authors and Affiliations

Soo Bin Bae
ORCID: ORCID
Ji Eun Lee
ORCID: ORCID
Jong Gyu Paik
Nam Choon Cho
ORCID: ORCID
Hyung Ik Lee
ORCID: ORCID
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Abstract

Silicon (Si) is the second most abundant element present in the lithosphere, and it constitutes one of the major inorganic nutrient elements of many plants. Although Si is a nonessential nutrient element, its beneficial role in stimulating the growth and development of many plant species has been generally recognized. Silicon is known to effectively reduce disease severity in many plant pathosystems. The key mechanisms of Si-mediated increased plant disease resistance involve improving mechanical properties of cell walls, activating multiple signaling pathways leading to the expression of defense responsive genes and producing antimicrobial compounds. This article highlights the importance and applicability of Si fertilizers in integrated disease management for crops.

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Authors and Affiliations

Maryam Shahrtash
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Abstract

Bollworms comprise the most harmful and economically relevant species of lepidopteran. Helicoverpa gelotopoeon (D.) (Lepidoptera: Noctuidae) is native to America and affects many crops. Tobacco is an industrial crop in which methods of pest control rely mainly on the application of insecticides. To develop new eco-friendly strategies against insect pests it is very important to overcome the side effects of insecticides. The utilization of fungal entomopathogens as endophytes is a new perspective that may accomplish good results. The present study aimed to evaluate the ability of endophytic Beauveria bassiana (Bals.-Criv.) Vuill. to affect H. gelotopoeon life parameters and feeding behavior on tobacco plants. Beauveria bassiana LPSC 1215 as an endophyte did not reduce the amount of vegetal material consumed by H. gelotopoeon larvae but affected the life cycle period of the plague, particularly the larval and adult stages. Also, egg fertility was affected since adults laid eggs that were not able to hatch. The results of this investigation provide new information on endophytic entomopathogen potential to be incorporated in Integrated Pest Management (IPM) programs.

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Authors and Affiliations

Florencia Vianna
Sebastian Pelizza
Leticia Russo
Natalia Allegrucci
Ana Scorsetti
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Abstract

The paper presents the research results of horizontal continuous casting of ingots of aluminium alloy containing 2% wt. silicon (AlSi2).

Together with the casting velocity (velocity of ingot movement) we considered the influence of electromagnetic stirring in the area of the

continuous casting mould on refinement of the ingot’s primary structure and their selected mechanical properties, i.e. tensile strength, yield

strength, hardness and elongation. The effect of primary structure refinement and mechanical properties obtained by electromagnetic

stirring was compared with refinement obtained by using traditional inoculation, which consists in introducing additives, i.e. Ti, B and Sr,

to the metal bath. On the basis of the obtained results we confirmed that inoculation done by electromagnetic stirring in the range of the

continuous casting mould guarantees improved mechanical properties and also decreases the negative influence of casting velocity, thus

increasing the structure of AlSi2 continuous ingots.

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Authors and Affiliations

J. Szajnar
M. Stawarz
D. Bartocha
T. Wróbel
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Abstract

This article deal with non-conventional methods to affect the crystallization of Al-alloys by the application of electromagnetic field. The application of electromagnetic field is not technically complicated, it does not require mechanical contact with the melt, and the scale of the crystallization influence is not dependent on the thickness of the casting. Two experimental materials were used: AlSi10MgMn and AlSi8Cu2Mn and two values of electromagnetic induction: B = 0.1 T a B = 0.2 T. The best results for alloy AlSi10MgMn were achieved by application of electromagnetic field with induction B = 0.2 T; during this experiment the best mechanical properties were achieved - the biggest increase of mechanical properties was recorded. The best results for alloy AlSi8Cu2Mn were achieved by combination of electromagnetic field with induction B = 0.1 T and modification by 0.05 wt. % Sr. In this case we don´t recommend to use electromagnetic field with induction B = 0.2 T; because of deposition of coarse grains and decreasing of mechanical properties.
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Authors and Affiliations

D. Bolibruchová
M. Brůna
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Abstract

The paper presents the research results of the influence of the precipitation hardening on hardness and microstructure of selected Al-Si and Al-Cu alloys obtained as 30 mm ingots in a horizontal continuous casting process. The ingots were heat treated in process of precipitation hardening i.e. supersaturation with subsequent accelerated or natural ageing. Moreover in the range of the study it has been carried out investigations of chemical constitution, microscopic metallographic with use of scanning electron microscope with EDS analysis system, and hardness measurements using the Brinell method. On basis of obtained results it has been concluded that the chemical constitution of the investigated alloys enables to classify them into Al alloys for the plastic deformation as EN AW-AlSi2Mn (alternatively cast alloy EN AC-AlSi2MgTi) and as EN AW-AlCu4MgSi (alternatively cast alloy EN AC-AlCu4MgTi) grades. Moreover in result of applied precipitation hardening has resulted in the precipitation from a supersaturated solid solution of dispersive particles of secondary phases rich in alloying element i.e. Si and Cu respectively. In consequence it has been obtained increase in hardness in case of AlSi2Mn alloy by approximately 30% and in case of AlCu4MgSi alloy by approximately 20% in comparison to the as-cast state of continuous ingots.
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Authors and Affiliations

T. Wróbel
P.M. Nuckowski
P. Jurczyk
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Abstract

In paper is presented idea of construction and influence of selected parts of stand of horizontal continuous casting on quality of pure Al and AlSi2

alloy ingots. The main parts of the made stand belong to induction furnace, which is also tundish, water cooled continuous casting mould, system

of recooling, system of continuous ingot drawing and cutting. Mainly was considered influence of electromagnetic stirrer, which was placed

in continuous casting mould on refinement of ingots structure. Effect of structure refinement obtained by influence of electromagnetic stirring was

compared with refinement obtained by use of traditional inoculation, which consists in introducing of additives i.e. Ti and B to metal bath. The

results of studies show possibility of effective refinement of Al and AlSi2 alloy primary structure, only with use of horizontal electromagnetic field

and without necessity of application of inoculants. This method of inoculation is important, because inoculants decrease the degree of purity

and electrical conductivity of pure aluminum and moreover are reason of point cracks formation during rolling of ingots.

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Authors and Affiliations

J. Szajnar
D. Bartocha
T. Wróbel
M. Stawarz
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Abstract

This study manufactured a SiC coating layer using the vacuum kinetic spray process and investigated its microstructure and wear properties. SiC powder feedstock with a angular shape and average particle size of 37.4 μm was used to manufacture an SiC coating layer at room temperature in two different process conditions (with different degrees of vacuum). The thickness of the manufactured coating layers were approximately 82.4 μm and 129.4 μm, forming a very thick coating layers. The SiC coating layers consisted of α-SiC and β-SiC phases, which are identical to the feedstock. Cross-sectional observation confirmed that the SiC coating layer formed a dense structure. In order to investigate the wear properties, ball crater tests were performed. The wear test results confirmed that the SiC coating layer with the best wear resistance achieved approximately 4.16 times greater wear resistance compared to the Zr alloy. This study observed the wear surface of the vacuum kinetic sprayed SiC coating layer and identified its wear mechanism. In addition, the potential applications of the SiC coating layer manufactured using the new process were also discussed.

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Authors and Affiliations

Gi-Su Ham
Kyu-Sik Kim
Kee-Ahn Lee
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Abstract

The aim of this paper is to present a new approach to the problem of silicon integrated spiral inductors modeling. First, an overview of models and modeling techniques is presented. Based on 3D simulations and published measurement results, a list of physical phenomena to be taken into account in the model is created and based on it, the spiral inductor modeling by frequency sampling method is presented. To verify the proposed method a test circuit, containing 6 spiral inductors was designed and integrated in a silicon technology. The parameters of the spiral inductors from the test circuit were next measured and compared with simulations results. The comparison for one of those six spiral inductors is presented in the article.

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Authors and Affiliations

M. Kałuża
A. Napieralski
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Abstract

The miner fly Liriomyza sativae (Blanchard) (Diptera: Agromyzidae) is an insect of economic importance for tomato culture. The conventional control with insecticides is complex due to the mining eating habit that provides protection to the larvae inside the leaves. Therefore, farmers can opt for biological control agents, or substances that provide protection to the plant. Thus, the objective of our research was to evaluate the use of silicon to induce resistance in tomato plants against L. sativae. The results showed that in tomato plants treated with SiO2/F and K2SiO3/F there was a reduction in the net reproduction rate (Ro), in the intrinsic rate of increase in number (rm), in the finite rate of increase (λ), in the average interval between generations (IMG), in the doubling time (TD), in the number of eggs/ female/day and the accumulated egg laying of F1 females of L. sativae. The products SiO2/F and K2SiO3/F gave the tomato a protective effect against injuries caused by L. sativae.
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Authors and Affiliations

Adamastor Pereira Barros
1
ORCID: ORCID
Hugo Bolsoni Zago
2
ORCID: ORCID
Dirceu Pratissoli
2
ORCID: ORCID
Paulo Cezar Cavatte
3
ORCID: ORCID
Julielson Oliveira Ataide
2
ORCID: ORCID

  1. Entomology Department, Universidade Federal Rural do Rio de Janeiro, Rio de Janeiro, Brazil
  2. Entomology Department, Universidade Federal do Espírito Santo, Campus Alegre, Alegre, Brazil
  3. Biology Department, Universidade Federal do Espírito Santo, Campus Alegre, Alegre, Brazil
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Abstract

Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
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Bibliography

[1] Sangwal, K. (2007). Additives and Crystallization Processes: From Fundamentals to Applications. Wiley. https://doi.org/10.1002/9780470517833
[2] Shah, P. B.,&Jones, K. A. (1998). Two-dimensional numerical investigation of the impact of materialparameter uncertainty on the steady-state performance of passivated 4H–SiC thyristors. Journal of Applied Physics, 84(8), 4625–4630. https://doi.org/10.1063/1.368689
[3] Pas, J., & Rosinski, A. (2017). Selected issues regarding the reliability-operational assessment of electronic transport systems with regard to electromagnetic interference. Eksploatacja i Niezawodnosc, 19(3), 375–381. https://doi.org/10.17531/ein.2017.3.8
[4] Makowski, L., Dziadak, B., & Suproniuk, M. (2019). Design and development of original WSN sensor for suspended particulate matter measurements. Opto-Electronics Review, 27(4), 363–368. https://doi.org/10.1016/j.opelre.2019.11.005
[5] Górecki, P., & Górecki, K. (2015). The analysis of accuracy of selected methods of measuring the thermal resistance of IGBTs. Metrology and Measurement Systems, 22(3), 455–464. https://doi.org/10.1515/mms-2015-0036
[6] Matsuura, H., Komeda, M., Kagamihara, S., Iwata, H., Ishihara, R., Hatakeyama, T., Watanabe, T., Kojima, K., Shinohe, T., & Arai, K. (2004). Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H–SiC epilayers. Journal of Applied Physics, 96(5), 2708–2715. https://doi.org/10.1063/1.1775298
[7] Kagamihara, S., Matsuura, H., Hatakeyama, T., Watanabe, T., Kushibe, M., Shinohe, T., & Arai, K. (2004). Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC. Journal of Applied Physics, 96(10), 5601–5606. https://doi.org/10.1063/1.1798399
[8] Matsuura, H., Komeda, M., Kagamihara, S., Iwata, H., Ishihara, R., Hatakeyama, T., Watanabe, T., Kojima, K., Shinohe, T., & Arai, K. (2004). Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H–SiC epilayers. Journal of Applied Physics, 96(5), 2708–2715. https://doi.org/10.1063/1.1775298
[9] Suproniuk, M., Pawłowski, M., Wierzbowski, M., Majda-Zdancewicz, E., & Pawłowski, Ma. (2018). Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation. Review of Scientific Instruments, 89(4). https://doi.org/10.1063/1.5004098
[10] Suproniuk, M., Kaczmarek, W., & Pawlowski, M. (2019). A New Approach to Determine the Spectral Images for Defect Centres in High-Resistive Semiconductor Materials. Proceedings of the 23rd International Conference Electronics 2019, Lithuania. https://doi.org/10.1109/ELECTRONICS.2019.8765694
[11] Piwowarski, K. (2020). Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems. Opto-electronics Review, 28(2), 74–81. https://doi.org/10.24425/opelre.2020.132502
[12] Suproniuk, M. (2020). Effect of generation rate on transient photoconductivity of semi-insulating 4H–SiC. Scientific Reports, 10(1). https://doi.org/10.1038/s41598-020-68898-z
[13] Suproniuk, M., Piwowarski, K., Perka, B., Kaminski, P., Kozlowski, R., & Teodorczyk, M. (2019). Blocking characteristics of photoconductive switches based on semi-insulating GAP and GaN. Elektronika ir Elektrotechnika, 25(4), 36–39. https://doi.org/10.5755/j01.eie.25.4.23968
[14] Sze, S. M.,&Kwok, K. Ng. (2006). Physics of Semiconductor Devices.Wiley. https://doi.org/10.1002/ 0470068329
[15] Colinge, J. P., & Colinge C. A. (2002). Physics of Semiconductor Devices. Springer. https://doi.org/10.1007/b117561
[16] Kozubal, M. (2011). Effect shallow impurities on the properties and concentrations of deep-level defect centres in SiC. Ph.D. Dissertation. https://rcin.org.pl/dlibra/publication/29712
[17] Zvanut, M. E., & Konovalov, V. V. (2002). The level position of a deep intrinsic defect in 4H–SiC studied by photoinduced electron parametric resonance. Applied Physics Letters, 80(3), 410–412. https://doi.org/10.1063/1.1432444
[18] Kaminski, P., Kozubal, M., Caldwell, J. D., Kew, K. K., Van Mil, B. L., Myers-Ward, R. L., Eddy, C. R. Jr., & Gaskill, D. K. (2010). Deep-level defects in epitaxial 4H–SiC irradiated with low-energy electrons. Electron Mater, 38(3–4), 26–34.
[19] Danno, K., & Kimoto, T. (2006). Deep hole traps in as-grown 4H–SiC epilayers investigated by deep level transient spectroscopy. Materials Science Forum, 527–529, 501–504. https://doi.org/10.4028/ www.scientific.net/MSF.527-529.501
[20] Kaminski, P., Kozłowski, R., Strzelecka, S., Hruban, A., Jurkiewicz-Wegner, E., & Piersa, M. (2011). High-resolution photoinduced transient spectroscopy of defect centres in semi-insulating GaP. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(4), 1361–1365. https://doi.org/10.1002/ pssc.201084009
[21] Ioffe.ru. GaP – Gallium Phosphide, Band structure and carrier concentration. http://www.ioffe.ru/ SVA/NSM/Semicond/GaP/bandstr.html
[22] Kennedy, T. A., & Wilsay, N. D. (1984). Electron paramagnetic resonance identification of the phosphorus antisite in electron-irradiated InP. https://doi.org/10.1063/1.94654
[23] Baber, N., & Iqbal, M. Z. (1987). Field effect on thermal emission from the 0.85-eV hole level in GaP. Journal of Applied Physics, 62(11), 4471–4474. https://doi.org/10.1063/1.339036
[24] Panish M. B., & Casey, H. C. Jr. (1969). Temperature dependence of the energy GaP in GaAs and GaP. Journal of Applied Physics, 40(1), 163–167. https://doi.org/10.1063/1.1657024
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Authors and Affiliations

Marek Suproniuk
1

  1. Military University of Technology, Faculty of Electronics, Institute of Electronic Systems, gen. S. Kaliskiego 2, Warsaw
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Abstract

The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd2O3) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd2O3 thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd2O3 and SiN phases present in the Nd2O3-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd2O3 thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025–1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
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Authors and Affiliations

Amine Mefoued
1 2
ORCID: ORCID
Bedra Mahmoudi
1
Nasser Benrekaa
2
Faiza Tiour
1
Hamid Menari
1
Abdelyamine Naitbouda
3
Amar Manseri
1
Afaf Brik
1
Salah Mezghiche
1
Moustafa Debbab
4

  1. Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger–7 merveilles, 16027 Algiers, Algeria
  2. Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32 Bab-Ezzouar, 16111 Algiers, Algeria
  3. Centre de Développement des Technologies Avancées (CDTA), Cité 20 août 1956, 16081 Algiers, Algeria
  4. Université Abou Bekr Belkaid BP 230, 13000 Chetouane, Tlemcen, Algeria
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Abstract

The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.

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Authors and Affiliations

Jacek Rąbkowski
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Abstract

The paper stresses the issue of strong temperature influence on the gain of a Silicon Photomultiplier (SiPM). High sensitivity of the detector to light (single photons) requires stable parameters during measurement, including gain. The paper presents a method of compensating the change of gain caused by temperature variations, by adjusting a suitable voltage bias provided by a precise power module. The methodology of the research takes in account applications with a large number of SiPMs (20 thousand), explains the challenges and presents the results of the gain stabilization algorithm.

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Authors and Affiliations

Mateusz Baszczyk
Piotr Dorosz
Sebastian Głąb
Wojciech Kucewicz
Łukasz Mik
Maria Sapor
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Abstract

The article presents crystallization process of silicon molybdenum ductile cast iron (SiMo). The alloy with 5% silicon content and with

variable amounts of Mo in a range of 0-1% was chosen for the research. The carbon content in the analysed alloys did not exceed 3,1%.

The studies of crystallization process were based on thermal – derivative analysis (TDA). Chemical composition of all examined samples

was analysed with the use of LECO spectrometer. Additionally, the carbon and the sulphur content was determined basing on carbon and

sulphur LECO analyser. For metallographic examination, the scanning electron microscopy (SEM) with EDS analyser was used. Disclosed

phases have been also tested with the use of X-ray diffraction. The results allowed the description of crystallization processes of silicon

molybdenum ductile cast iron using thermal – derivative analysis (TDA). Conducted studies did not allow for the clear identification of all

complex phases containing molybdenum, occurring at the grain boundaries. Therefore, the further stages of the research could include the

use of a transmission electron microscope to specify the description of complex compounds present in the alloy.

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Authors and Affiliations

M. Stawarz
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Abstract

Preliminary tests aimed at obtaining a cellular SiC/iron alloy composite with a spatial structure of mutually intersecting skeletons, using a

porous ceramic preform have been conducted. The possibility of obtaining such a composite joint using a SiC material with an oxynitride

bonding and grey cast iron with flake graphite has been confirmed. Porous ceramic preforms were made by pouring the gelling ceramic

suspension over a foamed polymer base which was next fired. The obtained samples of materials were subjected to macroscopic and

microscopic observations as well as investigations into the chemical composition in microareas. It was found that the minimum width of a

channel in the preform, which in the case of pressureless infiltration enables molten cast iron penetration, ranges from 0.10 to 0.17 mm. It

was also found that the ceramic material applied was characterized by good metal wettability. The ceramics/metal contact area always has

a transition zone (when the channel width is big enough), where mixing of the components of both composite elements takes place.

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Authors and Affiliations

M. Cholewa
B. Lipowska
B. Psiuk
Ł. Kozakiewicz
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Abstract

The article presents results of pitting corrosion studies of selected silicon cast irons. The range of studies included low, medium and high

silicon cast iron. The amount of alloying addition (Si) in examined cast irons was between 5 to 25 %. Experimental melts of silicon cast

irons [1-3] were conducted in Department of Foundry of Silesian University of Technology in Gliwice and pitting corrosion resistance

tests were performed in Faculty of Biomedical Engineering in Department of Biomaterials and Medical Devices Engineering of Silesian

University of Technology in Zabrze. In tests of corrosion resistance the potentiostat VoltaLab PGP201 was used. Results obtained in those

research complement the knowledge about the corrosion resistance of iron alloys with carbon containing Si alloying addition above 17 %

[4-6]. Obtained results were supplemented with metallographic examinations using scanning electron microscopy. The analysis of

chemical composition for cast irons using Leco spectrometer was done and the content of alloying element (silicon) was also determined

using the gravimetric method in the laboratory of the Institute of Welding in Gliwice. The compounds of microstructure were identify by

X-ray diffraction.

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Authors and Affiliations

A. Kajzer
M. Stawarz
M. Dojka
W. Kajzer
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Abstract

The formation of oxide film on the surface of aluminium melts, i.e. bifilms, are known to be detrimental when they are incorporated into

the cast part. These defects causes premature fractures under stress, or aid porosity formation. In this work, Al-12 Si alloy was used to cast

a step mould under two conditions: as-received and degassed. In addition, 10 ppi filters were used in the mould in order to prevent bifilm

intrusion into the cast part. Reduced pressure test samples were collected for bifilm index measurements. Samples were machined into

standard bars for tensile testing. It was found that there was a good agreement with the bifilm index and mechanical properties.

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Authors and Affiliations

F. Yilmaz
M. Uludağ
M. Uyaner
D. Dişpinar
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Abstract

This paper deals with numerical and analytical modelling of a diamond or silicon particle embedded in a metallic matrix. The numerical model of an elastic particle in a metallic matrix was created using the Abaqus software. Truncated octahedron-shaped and spherical-shaped diamond particles were considered. The numerical analysis involved determining the effect of temperature on the elastic and plastic parameters of the matrix material. The analytical model was developed for a spherical particle in a metallic matrix. The comparison of the numerical results with the analytical data indicates that the mechanical parameters responsible for the retention of diamond particles in a metal matrix are: the elastic energy of the particle, the elastic energy of the matrix and the radius of the plastic zone around the particle. An Al-based alloy containing 5% of Si and 2% of Cu was selected to study the mechanical behaviour of silicon precipitates embedded in the aluminium matrix. The model proposed to describe an elastic particle in a metallic matrix can be used to analyze other materials with inclusions or precipitates.
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Authors and Affiliations

J. Lachowski
J.M. Borowiecka-Jamrozek
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Abstract

This article focuses on the study of the influence of remelting and subsequent natural and artificial ageing on the structure of recycled AlSi9Cu3 alloy with increased iron content. The assessed changes in eutectic silicon and iron-based intermetallic phases were carried out using optical and scanning electron microscopy. The degradation of the eutectic silicon morphology due to remelting occurred only at the highest numbers of remelting. The effect of remelting the investigated alloy, which is accompanied by a gradual increase in wt. % Fe, began to manifest significantly through a change in the length of the ferric phases after the fourth remelting. As expected, the artificial ageing process has proven to be more effective than natural ageing. It has led to a change in the eutectic silicon morphology and has been beneficial in reducing the lengths of adverse ferric phases. The use of alloys with higher numbers of remelting, or with greater “contamination”, for the manufacture of shape-challenging castings is possible when using a suitable method of eliminating the negative factors of the remelting process. The results of our investigation show a suitable method of the above elimination the application of heat treatment T5 – via artificial ageing.

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Authors and Affiliations

M. Matejka
D. Bolibruchová
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Abstract

439L stainless steel composites blended with fifteen micron SiC particles were prepared by uniaxial pressing of raw powders at 100 MPa and conventional sintering at 1350oC for 2 h. Based on the results of X-ray diffraction analysis, dissolution of SiC particles were apparent. The 5 vol% SiC specimen demonstrated maximal densification (91.5%) among prepared specimens ­(0-10 vol% SiC); the relative density was higher than the specimens in the literature (80-84%) prepared by a similar process but at a higher forming pressure (700 MPa). The stress-strain curve and yield strength were also maximal at the 5 vol% of SiC, indicating that densification is the most important parameter determining the mechanical property. The added SiC particles in this study did not serve as the reinforcement phase for the 439L steel matrix but as a liquid-phase-sintering agent for facilitating densification, which eventually improved the mechanical property of the sintered product.

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Authors and Affiliations

Sang Woo Lee
Hyunho Shin
Kyong Yop Rhee

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