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Abstract

This paper investigates the preparation of silicon nitride composites with multi-walled carbon nanotubes (MWCNTs). Samples containing 1–10 wt% MWCNTs were ultrasonically processed in non-aqueous suspensions, dried, pressed, and then subjected to non-pressure sintering at 1600 °C for 2 h. The preliminary results showed that the mixture of activated silicon nitride and covered MWCNTs could be sintered. The porosity of the obtained samples ranged from 0.27 to 36.94 vol.%. The microstructure was observed by scanning electron microscopy (SEM), and the mechanical properties (hardness and fracture toughness) were also determined. Good hardness values were obtained for samples prepared by sintering the mechanically activated precursor under a flowing nitrogen atmosphere using the lowest fraction of CNTs. Residual activator reduced the densification of the composites.
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Authors and Affiliations

Marta Mikuśkiewicz
1
ORCID: ORCID

  1. Faculty of Materials Engineering, Department of Advanced Materials and Technologies, Silesian University of Technology, ul. Krasinskiego 8, 40-019 Katowice, Poland
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Abstract

For the sake of exploring the thermodynamic characteristics of hybrid ceramic bearings with metal inner rings in the application process, we established the mathematical model of bearings with metal inner rings based on the thermodynamics of bearings. The heat of the bearings, inner and outer raceway, and the deformation of bearings were calculated by the thermodynamic model. We used the bearing life testing machine to test the bearing load and speed. The consequences indicate that the temperature stability time of a hybrid ceramic bearing with the metal inner ring is about 6 hours after loading, and its temperature is about 1–2°C higher than that of a metal bearing. Under the condition of a certain speed, the stable temperature of bearing operation improves with the enlargement of the load. Under the condition of a certain load, the bearing temperature also improves with the enlargement of bearing speed. The overall temperature trend of the bearing outer ring is unanimous with the overall temperature value calculated by the model. The maximum error is between 2.2 and 2.4°C. The thermodynamic analysis of hybrid bearings with metal inner rings is conducive to a better study of the effect of bearing material characteristics on bearing performance.
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Authors and Affiliations

Jian Sun
1
Guangxiang Zhang
1
Junxing Tian
1
Yusheng Zhu
2

  1. School of Mechanical Engineering, Shenyang Jianzhu University, Liaoning, 100084, China
  2. Nanjing Metro Operation Co., Ltd., Nanjing 210000, China
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Abstract

The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd2O3) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd2O3 thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd2O3 and SiN phases present in the Nd2O3-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd2O3 thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025–1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
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Authors and Affiliations

Amine Mefoued
1 2
ORCID: ORCID
Bedra Mahmoudi
1
Nasser Benrekaa
2
Faiza Tiour
1
Hamid Menari
1
Abdelyamine Naitbouda
3
Amar Manseri
1
Afaf Brik
1
Salah Mezghiche
1
Moustafa Debbab
4

  1. Centre de Recherche en Technologie des Semi-conducteurs pour l’Énergétique (CRTSE), 02 Bd Frantz Fanon BP140, Alger–7 merveilles, 16027 Algiers, Algeria
  2. Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32 Bab-Ezzouar, 16111 Algiers, Algeria
  3. Centre de Développement des Technologies Avancées (CDTA), Cité 20 août 1956, 16081 Algiers, Algeria
  4. Université Abou Bekr Belkaid BP 230, 13000 Chetouane, Tlemcen, Algeria

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