@ARTICLE{Zharchenko_Ihor_Hot_2024,
 author={Zharchenko, Ihor and Gradauskas, Jonas and Masalskyi, Oleksandr and Rodin, Aleksej},
 volume={32},
 number={2},
 journal={Opto-Electronics Review},
 pages={e150181},
 howpublished={online},
 year={2024},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={Absorption of the below-bandgap solar radiation and direct pre-thermalizational impact of a hot carrier (HC) on the operation of a single-junction solar cell are ignored by the Shockley-Queisser theory. The detrimental effect of the HC is generally accepted only via the thermalization-caused heating of the lattice. Here, the authors demonstrate experimental evidence of the HC photocurrent induced by the below-bandgap 0.92 eV photon energy radiation in an industrial silicon solar cell. The carriers are heated both through direct free-carrier absorption and by residual photon energy remaining after the electron-hole pair generation. The polarity of the HC photocurrent opposes that of the conventional generation photocurrent, indicating that the total current across the p-n junction is contingent upon the interplay between these two currents. A model of current-voltage characteristics analysis allowing us to obtain a reasonable value of the HC temperature was also proposed. This work is remarkable in two ways: first, it contributes to an understanding of HC phenomena in photovoltaic devices, and second, it prompts discussion of the HC photocurrent as a new intrinsic loss mechanism in solar cells.},
 type={Article},
 title={Hot carrier photocurrent induced by 0.92 eV photon energy radiation in a Si solar cell},
 URL={http://www.journals.pan.pl/Content/130878/PDF-MASTER/OPELRE_2024_32_2_I_Zharchenko.pdf},
 doi={10.24425/opelre.2024.150181},
 keywords={hot carriers, solar cells, photocurrent, p-n junction, Shockley-Queisser theory},
}