@ARTICLE{Jarosz_Dawid_Optimization_2024,
 author={Jarosz, Dawid and Bobko, Ewa and Trzyna-Sowa, Małgorzata and Przeździecka, Ewa and Stachowicz, Marcin and Ruszała, Marta and Krzemiński, Piotr and Juś, Anna and Maś, Kinga and Wojnarowska-Nowak, Renata and Nowak, Oskar and Gudyka, Daria and Tabor, Brajan and Marchewka, Michał},
 volume={32},
 number={4},
 journal={Opto-Electronics Review},
 pages={e152620},
 howpublished={online},
 year={2024},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={The aim of this work was to improve the quality of the GaSb buffer layers on GaAs substrates using the molecular beam epitaxy (MBE) technology. The high quality of the GaSb buffer layers is one of the most important elements enabling the synthesis of good quality of type II superlattices (T2SL) structures for infrared applications. The main challenges in this regard are: compensation of the difference in lattice constants between GaAs and GaSb and obtaining the highest achievable surface quality of the final GaSb layer. In the literature, many authors describe different techniques to obtain the best quality of a GaSb buffer layer. In this work, we present the results of HRXRD, AFM, TOF-SIMS, SEM, and Nomarski optical microscope measurements obtained for 2 μm thick GaSb buffer layers. The GaSb layers are made according to different techniques and these results are compared with a GaSb buffer construction technique according to our own technology. During the processes, we also obtained an unintentional structure of one of the buffer layers, which allowed us to obtain very good results in terms of surface structure and crystallographic quality where FWHM in ωRC scan was equal to 138 arcsec and RMS 0.20 nm proving that there is still a lot of work to be done in this area.},
 type={Article},
 title={Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors},
 URL={http://www.journals.pan.pl/Content/133037/PDF/OPELRE_2024_32_4_D_Jarosz.pdf},
 doi={10.24425/opelre.2024.152620},
 keywords={gallium arsenide, gallium antimonide, molecular beam epitaxy, heteroepitaxy},
}