Tytuł artykułu

Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

Tytuł czasopisma

Metrology and Measurement Systems

Rocznik

2017

Wolumin

vol. 24

Numer

No 2

Autorzy

Kuparowitz, Martin ; Grmela, Lubomír ; Sedlakova, Vlasta

Słowa kluczowe

niobium oxide capacitors ; tantalum capacitors ; leakage current ; ion diffusion ; ion drift

Wydział PAN

Nauki Techniczne

Zakres

255–264

Wydawca

Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation

Data

2017.06.30

Typ

Artykuły / Articles

Identyfikator

DOI: 10.1515/mms-2017-0034 ; ISSN 2080-9050, e-ISSN 2300-1941

Źródło

Metrology and Measurement Systems; 2017; vol. 24; No 2; 255–264

Referencje

Elhadidy (2015), Ion electromigration in CdTe Schottky metal - semiconductor - metal structure, Solid State Ionics, 278. ; Laleko (1982), Ionic current and kinetics of activation of the conductivity of anodic oxide films on tantalum in strong electric fields, Soviet Electrochemistry, 18, 743. ; Teverovsky (2010), Degradation of leakage currents in solid tantalum capacitors under steady - state bias conditions Electronic Components and Technology th, Conference Proc, 752. ; Smulko (2011), Acoustic emission for detecting deterioration of capacitors under aging, Microelectronics Reliability, 51, 621. ; Szewczyk (2016), Voltage Dependence of Supercapacitor Capacitance, Metrol Meas Syst, 23, 403. ; Pavelka (2002), Noise and transport characterisation of tantalum capacitors, Microelectronics Reliability, 42, 841. ; Smulko (2012), Quality testing methods of foil - based capacitors, Microelectronics Reliability, 52, 603. ; Chaneliere (1998), Tantalum pentoxide thin films for advanced dielectric applications Material and, Science Eng, 269. ; Sedlakova (2016), Supercapacitor Degradation Assesment by Power Cycling and Calendar Life Tests, Metrol Meas Syst, 23, 345.