Details
Title
Influence of the multiplication layer on the long-wavelength InAsSb avalanche photodiodes performanceJournal title
Opto-Electronics ReviewYearbook
2025Volume
33Issue
3Authors
Affiliation
Manyk, Tetiana : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland ; Rutkowski, Jarosław : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland ; Martyniuk, Piotr : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, PolandKeywords
IR detectors ; InAsSb avalanche photodiodes ; gain ; barrier detectorsDivisions of PAS
Nauki TechniczneCoverage
e155676Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
08.09.2025Type
ArticleIdentifier
DOI: 10.24425/opelre.2025.155676Abstracting & Indexing
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