Details

Title

Influence of the multiplication layer on the long-wavelength InAsSb avalanche photodiodes performance

Journal title

Opto-Electronics Review

Yearbook

2025

Volume

33

Issue

3

Authors

Affiliation

Manyk, Tetiana : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland ; Rutkowski, Jarosław : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland ; Martyniuk, Piotr : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland

Keywords

IR detectors ; InAsSb avalanche photodiodes ; gain ; barrier detectors

Divisions of PAS

Nauki Techniczne

Coverage

e155676

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Date

08.09.2025

Type

Article

Identifier

DOI: 10.24425/opelre.2025.155676

Abstracting & Indexing

Abstracting and Indexing:
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EBSCO relevant databases
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SCOPUS relevant databases
ProQuest relevant databases
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WangFang

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ProQuesta (Ex Libris, Ulrich, Summon)
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