Search results

Filters

  • Journals
  • Authors
  • Keywords
  • Date
  • Type

Search results

Number of results: 3
items per page: 25 50 75
Sort by:
Download PDF Download RIS Download Bibtex

Abstract

In this study, Bi-doped SnSe was fabricated through the high energy ball milling and the hydrogen reduction of Bi2O3, and its thermoelectric properties were analyzed. The specimen with pure-Bi was fabricated as a control group and properties were compared. In the case of specimens with added Bi2O3, when sintering was performed in a hydrogen atmosphere, Bi2O3 with a high melting point was reduced to Bi with a relatively low melting point. At this time, because of the appearance of the liquid phase, the orientation of the (400) plane increased, and the density was improved. As a result, the change of SnSe to n-type was confirmed in the temperature range of 300 K - 773 K due to Bi doping. Additionally, when Bi2O3 was used instead of pure-Bi, the thermal conductivity, which is inversely proportional to the figure of merit, decreased, and the electrical conductivity increased, resulting in an improvement in the figure of merit.
Go to article

Authors and Affiliations

Jin Kwang Jang
1
ORCID: ORCID
Jaeyun Moon
2
ORCID: ORCID
Jongmin Byun
1 3
ORCID: ORCID

  1. Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Republic of Korea
  2. University of Nevada, Las Vegas, Department of Mechanical Engineering, 4505 S. Maryland Pkwy Las Vegas, Nv 89154, United States
  3. Seoul National University of Science And Technology, The Institute of Powder Technology, Seoul 01811, Republic of Korea
Download PDF Download RIS Download Bibtex

Abstract

Black TiO 2nanofibers have recently emerged as a promising material that has both advantages of black metal oxide and one-dimensional nanostructure. However, current reduction-based synthesis approaches are not compatible with practical applications because these processes require high process costs, complicated processes, and sophisticated control. Therefore, it is still necessary to develop a simple and facile method that can easily introduce atomic defects during the synthesis process. This work suggests an electrospinning process with an antioxidant and subsequent calcination process for the facile synthesis of black TiO 2 nanofibers. The synthesized black TiO 2 nanofiber has an average diameter of 50.3 nm and a rutile structure. Moreover, this nanofiber represented a noticeable black color and a bandgap of 2.67 eV, clearly demonstrating the bandgap narrowing by the introduced atomic defects.
Go to article

Authors and Affiliations

Myeongjun Ji
1
ORCID: ORCID
Eung Ryong Kim
1
ORCID: ORCID
Mi-Jeong Park
1
ORCID: ORCID
Hee Yeon Jeon
1
ORCID: ORCID
Jaeyun Moon
2
ORCID: ORCID
Jongmin Byun
1
ORCID: ORCID
Young-In Lee
1
ORCID: ORCID

  1. Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul, 01811, Republic of Korea
  2. University of Nevada, Department of Mechanical Engineering, Las Vegas, 4505 S. Maryland PKWY Las Vegas, NV 89154, United States
Download PDF Download RIS Download Bibtex

Abstract

Molybdenum (Mo) is used to form a barrier layer for metal wiring in displays or semiconductor devices. Recently, researches have been continuously attempted to fabricate Mo sputtering targets through additive manufacturing. In this study, spherical Mo powders with an average particle size of about 37 um were manufactured by electrode induction melting gas atomization. Subsequently, Mo layer with a thickness of 0.25 mm was formed by direct energy deposition in which the scan speed was set as a variable. According to the change of the scan speed, pores or cracks were found in the Mo deposition layer. Mo layer deposited with scan speed of 600 mm/min has the hardness value of 324 Hv with a porosity of approximately 2%. We demonstrated that Mo layers with higher relative density and hardness can be formed with less effort through direct energy deposition compared to the conventional powder metallurgy.
Go to article

Bibliography

[1] A. Mancaleoni, A. Sitta, Al. Colombo, R. Villa, G. Mirone, M. Renna, M. Calabretta, Copper wire bonding process characterization and simulation, 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany, VDE Verlag GmbH (2020).
[2] G.H. Oh, S. Kim, T. Kim, J. Alloys Compd., (2020). DOI: https://doi.org/10.1016/j.jallcom.2020.157901 (in press).
[3] T.K. Chee, K.S. Theen, T.M. Sin, Cu-Cu wire bonding challenges on MOSFET wafer technology, 15th Electronics Packaging Technology Conference, Singapore, Singapore, VDE Verlag GmbH (2013).
[4] K . Mukai, T. Magaya, L. Brandt, Z. Liu, H. Fu, S. Hunegnaw, Adhesive enabling technology for directly plating copper onto glass, 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference, Taipei, Taiwan, IEEE (2014).
[5] B. He, J. Petzing, P. Webb, R. Leach, Opt. Lasers Eng. 75, 39-47 (2015).
[6] A.R.M. Yusoff, M.N. Syahrul, K. Henkel, Bull. Mater. Sci. 30, 329-331 (2007).
[7] L. Guo, W.Y. Zhang, Z.N. Xin, C.S. Yao, Int. J. Refract. Met. Hard Mater. 78, 45-50 (2019).
[8] X. Gao, L. Li, J. Liu, X. Wang, H. Yu, Int. J. Refract. Met. Hard Mater. 88, 105186 (2020).
[9] P. Alén, M. Ritala, K. Arstila, J. Keinonen, M. Leskelä, J. Electrochem. Soc. 152, G361 (2005).
[10] W. Li, X. Yan, A.G. Aberle, S. Venkataraj, Int. J. Photoenergy 2016, 1-10 (2016).
[11] P.S. Suryavanshi, C.J. Panchal, A.L. Patel, Mater. Today: Proc., (2020). DOI: https://doi.org/10.1016/j.matpr.2020.07.706 (in press).
[12] C. Wongwanitwatta1, M. Horprathum, C. Chananonnawathorn, AIP Conf. Proc. 2279, 120007 (2020).
[13] G. An, J. Sun, Y. Sun, W. Cao, Mater. Sci. Forum 913, 853-861 (2018).
[14] B. Bax, R. Rajput, R. Kellet, M. Reisacher, Addit. Manuf. 21, 487-494 (2018).
[15] D.R. Feenstra, A. Molotnikov, N. Birbilis, Mater. Des. 198, 109342 (2021).
[16] R. Ohser-Wiedemann, U. Martin, H. J. Seifert, A, Müller, Int. J. Refract. Met. Hard Mater. 28 (4), 550-557 (2010)
Go to article

Authors and Affiliations

Goo-Won Roh
1 2
ORCID: ORCID
Eun-Soo Park
2
ORCID: ORCID
Jaeyun Moon
3
ORCID: ORCID
Hojun Lee
4
ORCID: ORCID
Jongmin Byun
4
ORCID: ORCID

  1. University, Department of Materials Science and Engineering, Seoul 04763, Republic of Korea
  2. Research and Development Center, Eloi Materials Lab (EML) Co. Ltd., Suwon 16229, Republic of Korea
  3. University of Nevada, Department of Mechanical Engineering, Las Vegas, 4505 S. Maryland PKWY Las Vegas, NV 89154, United States
  4. Seoul National University of Science and Technology, Department of Materials Science and Engineering Seoul 01811, Republic of Korea

This page uses 'cookies'. Learn more