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Abstract

In this study, Bi-doped SnSe was fabricated through the high energy ball milling and the hydrogen reduction of Bi2O3, and its thermoelectric properties were analyzed. The specimen with pure-Bi was fabricated as a control group and properties were compared. In the case of specimens with added Bi2O3, when sintering was performed in a hydrogen atmosphere, Bi2O3 with a high melting point was reduced to Bi with a relatively low melting point. At this time, because of the appearance of the liquid phase, the orientation of the (400) plane increased, and the density was improved. As a result, the change of SnSe to n-type was confirmed in the temperature range of 300 K - 773 K due to Bi doping. Additionally, when Bi2O3 was used instead of pure-Bi, the thermal conductivity, which is inversely proportional to the figure of merit, decreased, and the electrical conductivity increased, resulting in an improvement in the figure of merit.
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Authors and Affiliations

Jin Kwang Jang
1
ORCID: ORCID
Jaeyun Moon
2
ORCID: ORCID
Jongmin Byun
1 3
ORCID: ORCID

  1. Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, Republic of Korea
  2. University of Nevada, Las Vegas, Department of Mechanical Engineering, 4505 S. Maryland Pkwy Las Vegas, Nv 89154, United States
  3. Seoul National University of Science And Technology, The Institute of Powder Technology, Seoul 01811, Republic of Korea
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Abstract

Molybdenum (Mo) is used to form a barrier layer for metal wiring in displays or semiconductor devices. Recently, researches have been continuously attempted to fabricate Mo sputtering targets through additive manufacturing. In this study, spherical Mo powders with an average particle size of about 37 um were manufactured by electrode induction melting gas atomization. Subsequently, Mo layer with a thickness of 0.25 mm was formed by direct energy deposition in which the scan speed was set as a variable. According to the change of the scan speed, pores or cracks were found in the Mo deposition layer. Mo layer deposited with scan speed of 600 mm/min has the hardness value of 324 Hv with a porosity of approximately 2%. We demonstrated that Mo layers with higher relative density and hardness can be formed with less effort through direct energy deposition compared to the conventional powder metallurgy.
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Bibliography

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[7] L. Guo, W.Y. Zhang, Z.N. Xin, C.S. Yao, Int. J. Refract. Met. Hard Mater. 78, 45-50 (2019).
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Authors and Affiliations

Goo-Won Roh
1 2
ORCID: ORCID
Eun-Soo Park
2
ORCID: ORCID
Jaeyun Moon
3
ORCID: ORCID
Hojun Lee
4
ORCID: ORCID
Jongmin Byun
4
ORCID: ORCID

  1. University, Department of Materials Science and Engineering, Seoul 04763, Republic of Korea
  2. Research and Development Center, Eloi Materials Lab (EML) Co. Ltd., Suwon 16229, Republic of Korea
  3. University of Nevada, Department of Mechanical Engineering, Las Vegas, 4505 S. Maryland PKWY Las Vegas, NV 89154, United States
  4. Seoul National University of Science and Technology, Department of Materials Science and Engineering Seoul 01811, Republic of Korea
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Abstract

In this study, we demonstrated a method of controllably synthesizing one-dimensional nanostructures having a dense or a hollow structure using fibrous sacrificial templates with tunable crystallinity. The fibrous Ga2O3 templates were prepared by calcining the polymer/gallium precursor nanofiber synthesized by an electrospinning process, and their crystallinity was varied by controlling the calcination temperature from 500oC to 900oC. GaN nanostructures were transformed by nitriding the Ga2O3 nanofibers using NH3 gas. All of the transformed GaN nanostructures maintained a one-dimensional structure well and exhibited a diameter of about 50 nm, but their morphology was clearly distinguished according to the crystallinity of the templates. When the templates having a relatively low crystallinity were used, the transformed GaN showed a hollow nanostructure, and as the crystallinity increased, GaN was converted into a denser nanostructure. This morphological difference can be explained as being caused by the difference in the diffusion rate of Ga depending on the crystallinity of Ga2O3 during the conversion from Ga2O3 to GaN. It is expected that this technique will make possible the tubular nanostructure synthesis of nitride functional nanomaterials.
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Bibliography

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[15] Y.-I. Lee, Mater. Chem. Phys. 180, 104 (2016).
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Authors and Affiliations

Yun Taek Ko
1
ORCID: ORCID
Mijeong Park
2
ORCID: ORCID
Jingyeong Park
1
ORCID: ORCID
Jaeyun Moon
3
ORCID: ORCID
Yong-Ho Choa
1
ORCID: ORCID
Young-In Lee
2
ORCID: ORCID

  1. Hanyang University, Dept. of Advanced Materials Science and Engineering, Ansan 15588, Republic of Korea
  2. Seoul National University of Science and Technology, Dept. of Materials Science and Engineering, Seoul 01811, Republic of Korea
  3. University of Nevada , Dept. of Mechanical Engineering, Las Vegas, 4505 S. Maryland PKWY Las Vegas, Nv 89154, United States
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Abstract

Black TiO 2nanofibers have recently emerged as a promising material that has both advantages of black metal oxide and one-dimensional nanostructure. However, current reduction-based synthesis approaches are not compatible with practical applications because these processes require high process costs, complicated processes, and sophisticated control. Therefore, it is still necessary to develop a simple and facile method that can easily introduce atomic defects during the synthesis process. This work suggests an electrospinning process with an antioxidant and subsequent calcination process for the facile synthesis of black TiO 2 nanofibers. The synthesized black TiO 2 nanofiber has an average diameter of 50.3 nm and a rutile structure. Moreover, this nanofiber represented a noticeable black color and a bandgap of 2.67 eV, clearly demonstrating the bandgap narrowing by the introduced atomic defects.
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Authors and Affiliations

Myeongjun Ji
1
ORCID: ORCID
Eung Ryong Kim
1
ORCID: ORCID
Mi-Jeong Park
1
ORCID: ORCID
Hee Yeon Jeon
1
ORCID: ORCID
Jaeyun Moon
2
ORCID: ORCID
Jongmin Byun
1
ORCID: ORCID
Young-In Lee
1
ORCID: ORCID

  1. Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul, 01811, Republic of Korea
  2. University of Nevada, Department of Mechanical Engineering, Las Vegas, 4505 S. Maryland PKWY Las Vegas, NV 89154, United States

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