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Abstract

This paper gives a detailed electroacoustic study of a new generation of monolithic CMOS micromachined electrodynamic microphone, made with standard CMOS technology. The monolithic integration of the mechanical sensor with the electronics using a standard CMOS process is respected in the design, which presents the advantage of being inexpensive while having satisfactory performance. The MEMS microphone structure consists mainly of two planar inductors which occupy separate regions on substrate. One inductor is fixed; the other can exercise out-off plane movement. Firstly, we detail the process flow, which is used to fabricate our monolithic microphone. Subsequently, using the analogy between the three different physical domains, a detailed electro-mechanical-acoustic analogical analysis has been performed in order to model both frequency response and sensitivity of the microphone. Finally, we show that the theoretical microphone sensitivity is maximal for a constant vertical position of the diaphragm relative to the substrate, which means the distance between the outer and the inner inductor. The pressure sensitivity, which is found to be of the order of a few tens of μV/Pa, is flat within a bandwidth from 50 Hz to 5 kHz.
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Authors and Affiliations

Farès Tounsi
Brahim Mezghani
Libor Rufer
Mohamed Masmoudi
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Abstract

In vivo biomedical devices are one of the most studied applications for vibrational energy harvesting. In this paper, we investigated a novel high-displacement device for harvesting heartbeats to power leadless implantable pacemakers. Due to the location peculiarities, certain constraints must be respected for the design of such devices. Indeed, the total dimension of the system must not exceed 5.9 mm to be usable within the leadless pacemakers and it must be able to generate accelerations lower than 0.25 m/s2 at frequencies of less than 50 Hz. The proposed design is an electrostatic system based on a square electret of dimension 4.5 mm. It is based on the Quasi-Concertina structure, which has a very low resonant frequency of 26.02 Hz and a low stiffness of 0.492 N/m, allowing it to be very useful in such an application. Using a Teflon electret charged at 1000 V, the device was able to generate an average power of 10.06 μW at a vibration rate of 0.25 m/s2 at the resonant frequency.
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Authors and Affiliations

Bilel Maamer
1
ORCID: ORCID
Nesrine Jaziri
1 2
ORCID: ORCID
Mohamed Hadj Said
3
ORCID: ORCID
Fares Tounsi
1
ORCID: ORCID

  1. Systems Integration and Emerging Energies (SI2E), École nationale d’ingénieurs de Sfax, Université de Sfax 3038 Sfax, Tunisia
  2. Electronics Technology Group, Institute of Micro and Nanotechnologies MacroNanoTechnische Universität Ilmenau, Gustav-Kirchhoff-Straße 1 Ilmenau 98693, Germany
  3. Center for Research in Microelectronics and Nanotechnology (CRMN) Sousse 4050, Tunisia

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