The paper presents a comprehensive look at the perspectives on the use of THz in digital communication systems. The publication aims to focus on arguments that justify a significant increase in the frequency of radio links and their integration with fibre-based networks. Comparison of THz links with their microwave and optical counterparts is discussed from basic physical limitations to technological constraints. Main attention is paid to the available channel capacity resulting from its bandwidth and signal-to-noise ratio. The short final discussion is about technology platforms that seem to be crucial to the availability of suitable THz sources. According to the author, the biggest advantage of using bands in the range of several hundred GHz for a digital data transmission is their use for mobile communication over short distances, as well as for broadband indoor links. However, these applications require a development of compact electronic THz sources with low noise and power reaching single watts. This is beyond the range of the most popular silicon-based technology platform, although a significant progress can be expected with the development of technologies based on wide bandgap semiconductors. Fibre optic connections remain the unquestioned leader in communication over long distances and permanent links.

The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for light-trapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.

Thermo-optic properties enhancement of the bi-stable temperature threshold sensors based on a partially filled photonic crystal fiber was reported. Previously tested transducers filled with a selected group of pure n-alkanes had in most cases differences between switching ON and OFF states. Therefore, the modification of filling material by using additional crystallization centers in the form of gold nanoparticles was applied to minimize this undesirable effect. The evaluation of the thermodynamic properties of pentadecane and its mixtures with 14 nm spherical Au nanoparticles based on the differential scanning calorimetry measurements was presented. Optical properties analysis of sensors prepared with these mixtures has shown that they are bounded with refractive index changes of the filling material. Particular sensor switches ON before melting process begins and switches OFF before crystallization starts. Admixing next group of n-alkanes with these nanoparticles allows to design six sensors transducers which change ON and OFF states at the same temperature. Thus, the transducers with a wider temperature range for fiber-optic multi-threshold temperature sensor tests will be used.

In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6 × 10 2 A/cm2 at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.

Optical sampling based on ultrafast optical nonlinearities is a useful technique to monitor the waveforms of ultrashort optical pulses. In this paper, we present a new implementation of optical waveform sampling systems by employing our newly constructed free-running mode-locked fibre laser with a tunable repetition rate and a low timing jitter, an all-optical waveform sampler with a highly nonlinear fibre (HNLF), and our developed computer algorithm for optical waveform display and measurement, respectively. Using a femtosecond fibre laser to generate the highly stable optical sampling pulses and exploiting the four-wave mixing effect in a 100 m-long HNLF, we successfully demonstrate the all-optical waveform sampling of a 10 GHz optical clock pulse sequence with a pulse width of 1.8 ps and a 80 Gbit/s optical data signal, respectively. The experimental results show that waveforms of the tested optical pulse signals are accurately reproduced with a pulse width of 2.0 ps. This corresponds to a temporal resolution of 0.87 ps for optical waveform measurement. Moreover, the optical eye diagram of a 10Gbit/s optical data signal with a 1.8 ps pulse width is also accurately measured by employing our developed optical sampling system.

The paper presents experimental results of the lifetime of light induced excess carriers in the n-type silicon. The lifetimes of carriers of silicon crystals were analysed as a function of the intensity of light illuminating the sample. As a measurement method of the lifetime of carriers, the photoacoustic method in a transmission configuration with different surfaces was used. The dependence character was next analysed in the frame of the Shockley Reed Hall statistics in approximation of the light low intensity.

Number of trace compounds (called biomarkers), which occur in human breath, provide an information about individual feature of the body, as well as on the state of its health. In this paper we present the results of experiments about detection of certain biomarkers using laser absorption spectroscopy methods of high sensitivity. For NO, OCS, C₂H₆, NH₃, CH₄, CO and CO(CH₃)₂ an analysis of the absorption spectra was performed. The influence of interferents contained in exhaled air was considered. Optimal wavelengths of the detection were found and the solutions of the sensors, as well as the obtained results were presented. For majority of the compounds mentioned above the detection limits applicable for medicine were achieved. The experiments showed that the selected optoelectronic techniques can be applied for screening devices providing early diseases detection.

Dye-sensitized solar cells (DSSCs) were prepared using various food dyes. Food dyes are economically superior to organometallic dyes since they are nontoxic and inexpensive. The spectrophotometric evaluation of chosen food dyes in solution and on a TiO₂ substrate show that the dyes form J-aggregation on the photoelectrode substrate. Oxidation of potential measurements for used food dyes ensured an energetically permissible and thermodynamically favorable charge transfer throughout the continuous cycle of a photo-electric conversion. The performance of dye-sensitized solar cells based on food dyes was studied. The results illustrate that the dye containing carboxylic acid and sulfonic acid as the acceptor group gave the maximum conversion efficiency 4.20%.

In this study a metal clad waveguide sensor with a metamaterial guiding layer is analyzed. Sensitivity of the proposed sensor is derived using dispersion and Fresenal’s equations for waveguiding mode and reflection mode. While efficiently analyzing and comparing the results with the existing one, some interesting findings are achieved. It is observed that the proposed sensor shows larger cover layer sensitivity and larger adlayer sensitivity compared to the dielectric guiding layer sensor due to adsorbtive properties of metamaterial. Henceforth, it concludes that the proposed sensor shows sensitivity improvement over a dielectric guiding layer sensor.

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards (110). The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon−confinement layers in the construction of mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires the doping concentration of 1×10¹⁹ cm^–3 and 1×10²⁰ cm^–3 for lasers working at 9 μm and 5 μm, respectively. The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact layers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a distinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of –240 ÷ –780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.

ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.

Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors.

Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data.

At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.

In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called “green gap”. This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

The article presents an overview of polymeric materials for flexible substrates in photovoltaic (PV) structures that could be used as power supply in the personal electronic systems. Four types of polymers have been elected for testing. The first two are the most specialized and heat resistant polyimide films. The third material is transparent polyethylene terephthalate film from the group of polyesters which was proposed as a cheap and commercially available substrate for the technology of photovoltaic cells in a superstrate configuration. The last selected polymeric material is a polysiloxane, which meets the criteria of high elasticity, is temperature resistant and it is also characterized by relatively high transparency in the visible light range. For themost promising of these materials additional studies were performed in order to select those of them which represent the best optical, mechanical and temperature parameters according to their usage for flexible substrates in solar cells.

In this paper an analysis of the surface properties of (Ti,Pd,Eu)O_x thin films prepared by magnetron sputtering has been described. In particular, the results of composition and structure investigations were studied in relation to the surface state and optical properties. It was found that (Ti,Pd,Eu)O_x film was nanocrystalline and had a rutile structure. The average crystallites size was equal to 7.8 nm. Films were homogeneous and had densely packed grains. Investigation of the surface properties by XPS showed that titanium was present at 4+ state (in the TiO₂form), palladium occurred as PdO₂(also at 4+ state), while europium was in Eu₂O₃form (at 3+ state). In comparison with the unmodiffied TiO₂, the coating with Pd and Eu additives had a rather high transparency (approx. 47%) in the visible light range, its optical absorption edge was shifted towards into the longer wavelengths (from 345 nm to 452 nm), and the width of optical energy gap Egopt was nearly twice lower (1.82 eV). Besides, the resistivity of (Ti,Pd,Eu)O_x at room temperature was 1×10³ Wcm. In the case of the film as-deposited on Si substrate (p-type) the generation of photocurrent as a response to light beam excitation (λ_exc = 527 nm) was observed.

Erbium-doped lead silicate glass has been investigated for near-infrared emission and up-conversion applications. Near-infrared emission due to ⁴I_13/2 → ⁴I_15/2 transition of Er³⁺ is relatively broad (70.5 nm) and long-lived (3.7 ms). Also, up-conversion luminescence spectra of Er³⁺ ions in lead silicate glass have been examined as a function of temperature. The relative intensities of luminescence bands corresponding to ²H_11/2 → ⁴I_15/2 and ⁴S_3/2 → ⁴I_15/2 transitions of Er³⁺ were determined with temperature. The fluorescence intensity ratio and temperature sensitivity were calculated. The maximum sensitivity for Er³⁺ doped lead silicate glass is close to 26.4 × 10⁻⁴ K⁻¹ at T = 590 K.

A novel methodology was implemented in the present study to concurrently control power conversion efficiency (η) and durability (D) of co-sensitized dye solar cells. Applying response surface methodology (RSM) and Desirability Function (DF), the main influential assembling (dye volume ratio and anti-aggregation agent concentration) and operational (performance temperature) parameters were systematically changed to probe their main and interactive effects on the η and D responses. Individual optimization based on RSM elucidated that D can be solely controlled by changing the ratio of vat-based organic photosensitizers, whereas η takes both effects of dye volume ratio and anti-aggregation concentration into account. Among the studied factors, the performance temperature played the most vital role in η and D regulation. In particular, however, multi-objective optimization by DF explored the degree to which one should be careful about manipulation of assembling and operational parameters in the way maximization of performance of a co-sensitized dye solar cell.

The electron field and photo-field emission from GaN nanostructures has been analyzed in this review. In order to explain the obtained experimental results, a model was proposed taking into account the change in carrier concentration distribution in the main and the satellite valley during the emission process. The lowering of work function (due to the increased number of carriers in the satellite valley) can explain the decrease in the Fowler-Nordheim plot slope. It was shown that the energy difference between the main and satellite valley in GaN was decreased in the case of quantum confinement, thus increasing the probability of electron transition from Γ to X valley at same electric fields.

Investigations of electron photo-field emission demonstrated that the Fowler–Nordheim plots of the emission current have different slopes for nonilluminated and illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination the emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band.

A description of the status of the art of experimental and theoretical investigations of local crystalline structures of tetrahedron ordered ternary and quaternary semiconducting alloys is presented. Experimental EXAFS data and FTIR analysis are summarized and analyzed using both the Rigid Network Cations theoretical model and the Strained-tetrahedra model. Internal preferences of ion pairs in ternary and quaternary alloys are discussed. Several ternary systems of different structures show ideal quasi-canonical Bernoulli distributions, while others are characterized by extreme preferences in which one, several or even all configurations are depressed or even lacking. The results demonstrate that the validity of the Bernoulli distribution is limited and not fulfilled in many systems. This article is an expanded version of the scientific reports presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland.