The above-threshold operation of a Fabry-Perot laser with a nonlinear PT (parity time) mirror is investigated. For the first time, the analysis accounts for gain saturation of an active medium as well as gain and loss saturation effects in the PT mirror. The obtained laser output intensity characteristics have been demonstrated as a function of various PT mirror parameters such as: the ratio of the PT structure period to laser operating wavelength, number of PT mirror primitive cells, and gain and loss saturation intensities of the PT mirror gain and loss layers. Two functional configurations of the laser have been considered: laser operating as a discrete device, and as a component of an integrated circuit. It has been shown that, in general, the laser operation depends on the PT mirror orientation with respect to the active medium of the laser. Moreover, when the laser radiation is outcoupled through the PT mirror to the free space, bistable operation is possible, when losses of the mirror’s loss layer saturate faster than gain of the gain layer. Furthermore, for a given saturation intensity of the mirror loss layers, the increase of the saturation intensity of the mirror gain layers causes increasing output intensity, i.e., the PT mirror additionally amplifies the laser output signal.

The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a~ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a~ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.

An optimal design of a slot waveguide is presented for realizing an ultrafast optical modulator based on a 220 nm silicon wafer technology. The recipe is to maximize the confinement and interaction between optical power supported by the waveguide and electric field applied through metallic electrodes. As height of waveguide is fixed at 220 nm, the waveguide and slot width are optimized to maximize the confinement factor of optical power. Moreover, metal electrodes tend to make the waveguide lossy, their optimal placement is calculated to reduce the optical loss and enhance the voltage per unit width in the slot. Performance of an optimally designed slot waveguide with metal electrodes as ultrafast modulator is also discussed.

Adopting mode division multiplex (MDM) technology as the next frontier for optical fiber communication and on-chip optical interconnection systems is becoming very promising because of those remarkable experimental results based on MDM technology to enhance capacity of optical transmission and, hence, making MDM technology an attractive research field. Consequently, in recent years the large number of new optical devices used to control modes, for example, mode converters, mode filters, mode (de)multiplexers, and mode-selective switches, have been developed for MDM applications. This paper presents a review on the recent advances on mode converters, a key component usually used to convert a fundamental mode into a selected high-order mode, and vice versa, at the transmitting and receiving ends in the MDM transmission system. This review focuses on the mode converters based on planar lightwave circuit (PLC) technology and various PLC-based mode converters applied to the above two systems and realized with different materials, structures, and technologies. The basic principles and performances of these mode converters are summarized.

On-chip optical-interconnect technology emerges as an attractive approach due to its ultra-large bandwidth and ultra-low power consumption. Silicon-on-insulator (SOI) wire waveguides, on the other hand, have been identified to potentially replace copper wires for intra-chip communication. To take advantage of the wide bandwidth of SOI waveguides, wavelengthdivision multiplexing (WDM) has been implemented. However, WDM have inherent drawbacks. Mode-division multiplexing (MDM) is a viable alternative to WDM in MIMO photonic circuits on SOI as it requires only one carrier wavelength to operate. In this vein, mode converters are key components in on-chip MDM systems. The goal of this paper is to introduce a transverse electric mode converter. The suggested device can convert fundamental transverse electric modes to first-order transverse electric ones and vice versa. It is based on small material perturbation which introduces gradual coupling between different modes. This device is very simple and highly compact; the size of which is 3 μm2. Mathematical expressions for both the insertion loss and crosstalk are derived and optimized for best performance. In addition, three-dimensional finite-difference time-domain (3D-FDTD) simulations are performed in order to verify the mathematical model of the device. Our numerical results reveal that the proposed device has an insertion loss of 1.2 dB and a crosstalk of 10.1 dB. The device’s insertion loss can be decreased to 0.95 dB by adding tapers to its material perturbation.