Nauki Techniczne

Opto-Electronics Review

Opis

Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:

Optical Design and Applications,
Image Processing (without AI Algorithm Optimisation)
Plasmonics, Nanooptics, and Metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers

Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics

Submit your article

Journal Metrics:

JCR Impact Factor 2024:	0.9
5 Year Impact Factor 2023:	1.3
SCImago Journal Rank (SJR) 2024:	0.240
Source Normalized Impact per Paper (SNIP) 2024:	0.453
CiteScore 2024:	1.8
Ministry of Science and Higher Education*:	100 points

* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN

ISSN 1896-3757

Wydawcy

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓZWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, Nanooptics, and Metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

B. SAKOWICZ, Lodz University of Technology, Poland

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl

Managing Editor:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.

The journal content is available under the Creative Commons Attribution 4.0 International License ( https://creativecommons.org/licenses/by/4.0/).

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Roczniki i numery
Instrukcja dla autorów
Dodatkowe informacje
Zasady etyki publikacyjnej
Polityka antyplagiatowa

Wybierz numer

Zawartość

Opto-Electronics Review | 2024 | 32 | 2

1 Heat pipe-cooled highly-concentrated multi-junction solar cell

Mohammed Al Turkestani , Mohamed Sabry , Abdelrahman Lashin

Opto-Electronics Review | 2024 | 32 | 2 | e149393 | DOI: 10.24425/opelre.2024.149393

Słowa kluczowe: solar cell concentrator photovoltaics (CPV) heat pipe (HP) passive cooling PV performance

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Abstrakt

Concentrator photovoltaic (CPV) systems have proven the capability of competing with traditional photovoltaic (PV) systems due to their high efficiency and low area occupancy. Such CPV systems require efficient heat removal auxiliary systems, especially for medium and high optical concentration ratios. Operating a CPV system under a high optical concentration (ratio > 200 X) might require active cooling techniques, which have high operating costs and maintenance. On the other hand, heat pipes (HPs) are widely used in electronic devices for cooling purposes. This work discusses the possibility of operating a CPV system coupled with HPs as a passive cooling technique. Two different HPs with different lengths are used to compare cooling efficiency. Each HP length was tested either in a single or double configuration. Long HPs showed better heat removal compared to a traditional fin-cooling system. CVP cooling with HP systems enhanced the entire electrical output of the cell, mainly at high optical concentration ratios.

Przejdź do artykułu

Autorzy i Afiliacje

Mohammed Al Turkestani

e-mail:

ORCID:

Mohamed Sabry

1 2

e-mail:

ORCID:

Abdelrahman Lashin

1 3

e-mail:

ORCID:

Physics Department, College of Science, Umm Al Qura University, Makkah, Kingdom of Saudi Arabia
Solar Physics Lab, National Research Institute of Astronomy and Geophysics, Cairo, Egypt
Physics Department, Faculty of Science, Mansoura University, Mansoura, Egypt

2 Hot carrier photocurrent induced by 0.92 eV photon energy radiation in a Si solar cell

Ihor Zharchenko , Jonas Gradauskas , Oleksandr Masalskyi , Aleksej Rodin

Opto-Electronics Review | 2024 | 32 | 2 | e150181 | DOI: 10.24425/opelre.2024.150181

Słowa kluczowe: hot carriers solar cells photocurrent p-n junction Shockley-Queisser theory

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Abstrakt

Absorption of the below-bandgap solar radiation and direct pre-thermalizational impact of a hot carrier (HC) on the operation of a single-junction solar cell are ignored by the Shockley-Queisser theory. The detrimental effect of the HC is generally accepted only via the thermalization-caused heating of the lattice. Here, the authors demonstrate experimental evidence of the HC photocurrent induced by the below-bandgap 0.92 eV photon energy radiation in an industrial silicon solar cell. The carriers are heated both through direct free-carrier absorption and by residual photon energy remaining after the electron-hole pair generation. The polarity of the HC photocurrent opposes that of the conventional generation photocurrent, indicating that the total current across the p-n junction is contingent upon the interplay between these two currents. A model of current-voltage characteristics analysis allowing us to obtain a reasonable value of the HC temperature was also proposed. This work is remarkable in two ways: first, it contributes to an understanding of HC phenomena in photovoltaic devices, and second, it prompts discussion of the HC photocurrent as a new intrinsic loss mechanism in solar cells.

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Autorzy i Afiliacje

Ihor Zharchenko

Jonas Gradauskas

Oleksandr Masalskyi

1 2

Aleksej Rodin

Laboratory of Electronic Processes, Center for Physical Sciences and Technology, Saulėtekio Ave. 3, LT-10257 Vilnius, Lithuania
Department of Physics, Vilnius Gediminas Technical University, Saulėtekio Ave. 11, LT-10223 Vilnius, Lithuania

3 Interfaces-engineered M-structure for infrared detectors

Michał Marchewka , Dawid Jarosz , Marta Ruszała , Anna Juś , Piotr Krzemiński , Ewa Bobko , Małgorzata Trzyna-Sowa , Renata Wojnarowska-Nowak , Paweł Śliż , Michał Rygała , Marcin Motyka

Opto-Electronics Review | 2024 | 32 | 2 | e150183 | DOI: 10.24425/opelre.2024.150183

Słowa kluczowe: molecular beam epitaxy T2SL InAs/GaSb/AlSb/GaSb M-structures dyspersion relation numerical calculations

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Abstrakt

In this paper, the authors report strain-balanced M-structures InAs/GaSb/AlSb/GaSb superlattice growth on GaSb substrates using two kinds of interfaces (IFs): GaAs-like IFs and InSb-like IFs. The in-plane compressive strain of 60-period and 100-period InAs��/GaSb/AlSb��/GaSb with different InAs (��) and AlSb (��) monolayers are investigated. The M-structures InAs/GaSb/AlSb/GaSb represent type II superlattices (T2SL) and at present are under intensive investigation. Many authors show theoretical and experimental results that such structures can be used as a barrier material for a T2SL InAs/GaSb absorber tuned for long-wave infrared detectors (8 μm–14 μm). Beside that, M-structure can also be used as an active material for short-wave infrared detectors to replace InAs/GaSb which, for this region of infrared, are a big challenge from the point of view of balancing compression stress. The study of InAs/GaSb/AlSb/GaSb superlattice with the minimal strain for GaSb substrate can be obtained by a special procedure of molecular beam epitaxy growth through special shutters sequence to form both IFs. The authors were able to achieve smaller minimal mismatches of the lattice constants compared to literature. The high-resolution X-ray diffraction measurements prove that two types of IFs are proper for balancing the strain in such structures. Additionally, the results of Raman spectroscopy, surface analyses of atomic force microscopy, and differential interference contrast microscopy are also presented. The numerical calculations presented in this paper prove that the presence of IFs significantly changes the energy gap in the case of the investigated M-structures. The theoretical results obtained for one of the investigated structures, for a specially designed structure reveal an extra energy level inside the energy gap. Moreover, photoluminescence results obtained for this structure prove the good quality of the synthesized M-structures, as well as are in a good agreement with theoretical calculations.

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Autorzy i Afiliacje

Michał Marchewka

e-mail:

ORCID:

Dawid Jarosz

1 2

e-mail:

ORCID:

Marta Ruszała

e-mail:

ORCID:

Anna Juś

e-mail:

ORCID:

Piotr Krzemiński

e-mail:

ORCID:

Ewa Bobko

e-mail:

ORCID:

Małgorzata Trzyna-Sowa

e-mail:

ORCID:

Renata Wojnarowska-Nowak

e-mail:

ORCID:

Paweł Śliż

e-mail:

ORCID:

Michał Rygała

e-mail:

ORCID:

Marcin Motyka

e-mail:

ORCID:

Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów,al. Rejtana 16, 35-959 Rzeszów, Poland
International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems ofTechnology, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

4 Hybrid upconverting/paramagnetic Fe₃O₄/Gd₂O₃:Er³⁺, Yb³⁺, Mg²⁺, Nd³⁺nanoparticles – synthesis, characterization and biological applications

Izabela Kamińska , Kamil Sobczak , Yaroslav Zhydachevskyy , Tomasz Wojciechowski , Roman Minikayev , Bożena Sikora-Dobrowolska , Sabina Lewińska , Michał Chojnacki , Krzysztof Fronc

Opto-Electronics Review | 2024 | 32 | 2 | e150182 | DOI: 10.24425/opelre.2024.150182

Słowa kluczowe: core/shell nanoparticles upconversion co-precipitation methods HeLa tumor cells confocal microscopy paramagnetic

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Abstrakt

The goals of this work are to design and develop a technology for fabrication and study of multifunctional properties of core/shell nanoparticles (NPs) as magnetic/luminescent markers. The new hybrid core/shell Fe₃O₄/Gd₂O₃:1% Er³⁺, 18% Yb³⁺, 2.5% Mg²⁺, x% Nd³⁺NPs doped with different concentrations of neodymium ions, where x = 0%, 0.5%, 0.75%, 1%, 2%, 4%, were synthesized by the co-precipitation method. The NPs were characterised using XRD, TEM, SEM, EDX, confocal microscopy and photoluminescence. Fe₃O₄ (core) consists of several 13 nm NPs. The core/shell NPs have sizes from 220 nm to 641 nm. In this latter case, the shell thicknesses were 72, 80, and 121 nm. The upconversion efficiency properties and magnetic properties of the hybrid NPs were investigated. In the core/shell NPs, the addition of Nd³⁺ quenches the luminescence. The magnetic response of core/shell samples is rather paramagnetic and does not differ significantly from that registered for the shell material alone. For Gd₂O₃:1% Er³⁺, 18% Yb³⁺ and Fe₃O₄/Gd₂O₃:1% Er³⁺, 18% Yb³⁺, 2.5% Mg²⁺, 0.5% Nd³⁺, at 300 K, the values of the magnetization registered at ~ 40 kOe are similar and equal to ~ 5.3 emu·g⁻¹. The survivability of the HeLa tumor cells with the presence of the core/shell NPs was investigated for 24 h. The NPs are non-toxic up to a concentration of 1000 µg·ml⁻¹ and penetrate cells in the process of endocytosis which has been confirmed by confocal microscope studies.

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Autorzy i Afiliacje

Izabela Kamińska

e-mail:

ORCID:

Kamil Sobczak

Yaroslav Zhydachevskyy

e-mail:

ORCID:

Tomasz Wojciechowski

1 3

e-mail:

ORCID:

Roman Minikayev

e-mail:

ORCID:

Bożena Sikora-Dobrowolska

e-mail:

ORCID:

Sabina Lewińska

e-mail:

ORCID:

Michał Chojnacki

1 3

e-mail:

ORCID:

Krzysztof Fronc

1 3

e-mail:

ORCID:

Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, Warsaw 02-668, Poland
Faculty of Chemistry, Biological and Chemical Research Centre, University of Warsaw, ul. Żwirki i Wigury 101, Warsaw 02-089, Poland
International Research Centre MagTop, al. Lotników 32/46, Warsaw 02-668, Poland

5 Firmware development for the fibre-optic seismometer based on FOG

Marek Kamiński , Wojciech Tylman , Grzegorz Jabłoński , Rafał Kotas , Piotr Amrozik , Bartosz Sakowicz , Leszek R. Jaroszewicz

Opto-Electronics Review | 2024 | 32 | 2 | e150179 | DOI: 10.24425/opelre.2024.150179

Słowa kluczowe: fibre-optic rotational seismometer Sagnac effect simulation environment field-programmable gate array high-level synthesis

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Abstrakt

The main goal of the article is to present the concept of using a simulation environment when designing an advanced fibre-optic seismometer (FOS) using a field-programmable gate array (FPGA) computing system. The first part of the article presents the advanced requirements regarding the FOS principle of operation, as well as the measurement method using a closed-loop operation. The closed-loop control algorithm is developed using the high-level language C++ and then it is synthesised into an FPGA. The following part of the article describes the simulation environment developed to test the operation of the control algorithm. The environment includes a model of components of the measurement system, delays, and distortions in the signal processing path, and some of the measurement system surroundings. The article ends with a comparison of simulation data with measurements. The obtained results are consistent and prove correctness of the methodology adopted by the authors.

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Autorzy i Afiliacje

Marek Kamiński

e-mail:

ORCID:

Wojciech Tylman

e-mail:

ORCID:

Grzegorz Jabłoński

e-mail:

ORCID:

Rafał Kotas

e-mail:

ORCID:

Piotr Amrozik

e-mail:

ORCID:

Bartosz Sakowicz

e-mail:

ORCID:

Leszek R. Jaroszewicz

2 3

e-mail:

ORCID:

Department of Microelectronics and Computer Science, Lodz University of Technology, ul. Wolczanska 221, 93-005 Lodz, Poland
Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warszawa, Poland
Elproma Elektronika Sp. z o.o., ul. Duńska 2A, 05-152 Czosnów, Poland

6 Delay analysis of ring resonator-based beam-forming network in z-domain

Md. Danish Nadeem , Sanjeev Kumar Raghuwanshi , Ritesh Kumar

Opto-Electronics Review | 2024 | 32 | 2