Applied sciences

Opto-Electronics Review

Description

Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high-quality original papers from the following fields:

Optical Design and Applications,
Image Processing (without AI Algorithm Optimisation)
Plasmonics, Nanooptics, and Metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers

Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics

Submit your article

Journal Metrics:

JCR Impact Factor 2024:	0.9
5 Year Impact Factor 2023:	1.3
SCImago Journal Rank (SJR) 2024:	0.240
Source Normalized Impact per Paper (SNIP) 2024:	0.453
CiteScore 2024:	1.8
Ministry of Science and Higher Education*:	100 points

* changed Dec. 1st, 2021

From 1992 to 2005 the Journal was published only in the paper form. From 2006 it was available also online. Since 2017 Opto-Eelectronics Review is published only in electronic form. All volumes issued online by the end of 2019 can be found on the following websites:

Years 2017-2019: https://www.sciencedirect.com/journal/opto-electronics-review/issues
Years 2015-2016: https://www.degruyter.com/view/j/oere
Years 2006-2014: https://link.springer.com/journal/volumesAndIssues/11772
Years 1992-2005 (scanned version): https://optor.wat.edu.pl/contents.htm

ISSN

ISSN 1896-3757

Publishers

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Opto-Electronics Review - Editorial Board

Editor-in-Chief:
L. R. JAROSZEWICZ, Military University of Technology, Warsaw, Poland

Deputy Editor-in Chief:
P. MARTYNIUK, Military University of Technology, Warsaw, Poland

Board of Co-editors:

Optical Design and Applications
V.O. ANGELSKY, Chernivtsi National University, Chernivtsi, Ukraine

Image Processing
M. JÓZWIK, Warsaw University of Technology, Warsaw, Poland

Plasmonics, Nanooptics, and Metamaterials
T. ANTOSIEWICZ, Warsaw University, Warsaw, Poland

Modelling of Optoelectronic Devices. Semiconductor Lasers
M. DEMS, Łódź Technical University, Łódź, Poland

Optoelectronics Materials
D. DOROSZ, AGH University of Science and Technology, Cracow, Poland

Infrared Physics and Technology
M. KOPYTKO, Military University of Technology, Warsaw, Poland
F. WANG, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China

Technology and Fabrication of Optoelectronic Devices
J. MUSZALSKI, Institute of Electron Technology, Warsaw, Poland

Photonic Crystals
K. PANAJOTOV, Vrije Universiteit Brussels, Brussels, Belgium

Laser Physics, Technology and Applications
J. ŚWIDERSKI, Warsaw University of Technology, Warsaw, Poland

Optical Sensors and Applications
M. ŚMIETANA, Warsaw University of Technology, Warsaw, Poland

Photovoltaics
A. IWAN, Military Institute of Engineer Technology, Wroclaw, Poland

Biomedical Optics and Photonics
A. LIEBERT, Institute of Biocybernetics and Biomedical Engineering, Warsaw, Poland

International Editorial Advisory Board

D. BIMBERG, Technische Universitaet Berlin, Berlin, Germany

F. CAPASSO, Harvard University, Cambridge, USA

P.G. ELISEEV, University of New Mexico, Albuquerque, USA

P. HARING−BOLIVAR, University of Siegen, Siegen, Germany

M. HENINI, University of Nottingham, Nottingham, England

B. JASKORZYNSKA, Royal Institute of Technology, Kista, Sweden

M. KIMATA, Ritsumeikan University, Shiga, Japan

R. KLETTE, University of Auckland, Auckland, New Zealand

S. KRISHNA, University of New Mexico, Albuquerque, USA

J. MISIEWICZ, Wrocław University of Technology, Wrocław, Poland

E. OZBAY, Bilkent University, Ankara, Turkey

J.G. PELLEGRINI, Night Vision and Electronic Sensors Directorate, Fort Belvoir, USA

M. RAZEGHI, Northwestern University, Evanston, USA

A. ROGALSKI, Military University of Technology, Warsaw, Poland

P. RUSSELL, Max Planck Institute for the Science of Light, Erlangen, Germany

V. RYZHII, University of Aizu, Aizu, Japan

B. SAKOWICZ, Lodz University of Technology, Poland

C. SIBILIA, Universita' di Roma “La Sapienza”, Roma, Italy

A. TORRICELLI, Politecnico di Milano, Milano, Italy

T. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

W. WOLIŃSKI, Warsaw University of Technology, Warsaw, Poland

S.−T. WU, University of Central Florida, Orlando, USA

Language Editor

J. Kulesza, e-mail: jolanta.kulesza@wat.edu.pl

Managing Editor:

R.Podraza, e-mail: renata.podraza@wat.edu.pl

Publisher:

Polish Academy of Sciences and Association of Polish Electrical Engineers

Editorial office:

Military University of Technology,

ul. gen. Sylwestra Kaliskiego 2

00 – 908 Warsaw, Poland

opelre@wat.edu.pl

Opto-Electronics Review is an open access journal with all content available with no charge in full text version.

The journal content is available under the Creative Commons Attribution 4.0 International License ( https://creativecommons.org/licenses/by/4.0/).

Abstracting and Indexing:
Arianta
BazTech
EBSCO relevant databases
EBSCO Discovery Service
SCOPUS relevant databases
ProQuest relevant databases
Clarivate Analytics relevant databases
WangFang

additionally:
ProQuesta (Ex Libris, Ulrich, Summon)
Google Scholar

Volumes
Instructions for authors
Additional info
Publication Ethics Policy
Plagiarism Policy

Select number

Content

Opto-Electronics Review | 2024 | 32 | 4

1 Why FETs detect a THz signal at a frequency far beyond their amplifying capabilities

Jacek Marczewski , Michał Zaborowski , Daniel Tomaszewski , Przemysław Zagrajek , Norbert Pałka

Opto-Electronics Review | 2024 | 32 | 4 | e151989 | DOI: 10.24425/opelre.2024.151989

Keywords: terahertz detection field-effect transistors Dyakonov-Shur theory resistive mixing surface plasmons

Download PDF Download RIS Download Bibtex

Abstract

Field-effect transistors (FETs) are efficient detectors of THz radiation. Despite over three decades of research, controversy still exists regarding the detection mechanism. The article attempts to solve this problem systemically. Existing approaches to modeling THz detection are critically reviewed, including plasmonic, resistive mixing, hot carrier and thermal models. Limitations and inconsistencies of the first two approaches, along with some classical physics principles and experiments conducted, were identified. These include the facts that some models were formulated independently of material relaxation time constraints, and the plasmonic approach does not take into account the conditions for the formation of surface plasmon-polarons and does not describe the case of p-type devices (hole plasmons have never been experimentally recorded). Relevant measurements and theoretical considerations illustrate the inadequacy of these models. As a result of this analysis, thermoelectric models are expected to explain THz sensing by FETs.

Go to article

Authors and Affiliations

Jacek Marczewski

e-mail:

ORCID:

Michał Zaborowski

e-mail:

ORCID:

Daniel Tomaszewski

e-mail:

ORCID:

Przemysław Zagrajek

e-mail:

ORCID:

Norbert Pałka

e-mail:

ORCID:

Institute of Microelectronics and Photonics, Lukasiewicz Research Center, al. Lotników 32/46, 02-668 Warsaw, Poland
Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw, Poland

2 Analysis of irradiation in OptiTouch system with optical detection

Maciej Zajkowski , Piotr Kardasz , Łukasz Budzyński , Grzegorz Masłowski

Opto-Electronics Review | 2024 | 32 | 4 | e151990 | DOI: 10.24425/opelre.2024.151990

Keywords: optical detection irradiation optical guide display

Download PDF Download RIS Download Bibtex

Abstract

As part of the research and development project, a multi-touch multimedia system was implemented, working exclusively on the basis of optical technologies. The model of device with a diagonal of 42” was developed and made with 4K TV image technology and simultaneous detection in near infrared. The control of individual system modules was carried out on RaspberryPi microcomputers without typical operating system. The functionality of a conventional large-format display with unlimited multi-touch, QR code scanner, and a document scanner has been achieved in one housing. Luminance distribution tests were carried out in accordance with ANSI requirements and infrared radiation for detection work.

Go to article

Authors and Affiliations

Maciej Zajkowski

e-mail:

ORCID:

Piotr Kardasz

e-mail:

ORCID:

Łukasz Budzyński

e-mail:

ORCID:

Grzegorz Masłowski

e-mail:

ORCID:

Faculty of Electrical Engineering, Department of Photonics, Electronic and Lighting Technology, Bialystok University of Technology, ul. Wiejska 45, 15-351 Białystok, Poland
Faculty of Electrical and Computer Engineering, Department of Electrical and Computer Engineering Fundamentals, Rzeszow University of Technology, al. Powstańców Warszawy 12, 35-959 Rzeszów, Poland

3 Analysis of the impact of post-process modifications on the properties of TiO₂ thin films with high-temperature stable anatase phase deposited by the electron beam evaporation method

Agata Obstarczyk , Ewa Mańkowska , Wiktoria Weichbrodt , Paulina Kapuścik , Wojciech Kijaszek , Michał Mazur

Opto-Electronics Review | 2024 | 32 | 4 | e151991 | DOI: 10.24425/opelre.2024.151991

Keywords: post-process annealing electron beam evaporation TiO2 coating high-temperature stable anatase

Download PDF Download RIS Download Bibtex

Abstract

The paper describes the structural, optical, tribological, and mechanical properties of as‑prepared and annealed titanium dioxide (TiO₂) coatings. TiO₂ films were deposited by the electron beam evaporation (EBE) and additionally annealed at a temperature up to 800 °C using a tubular furnace. X-ray diffraction (XRD) analysis identified the amorphous phase of coatings as-prepared and annealed at 200 °C. The phase transition to anatase occurred at 400 °C, while annealing at 600 °C and 800 °C did not induce a phase transition to the rutile phase. The crystallite size increased with an annealing up to 40.4 nm at 800 °C. Raman spectroscopy confirmed the anatase phase in thin films annealed at 400 °C and above. A scanning electron microscope (SEM) images revealed surface morphology and grain structure changes after post-process high-temperature annealing. The optical transmission measurements showed a redshift in the fundamental absorption edge with increasing annealing temperature, accompanied by a decreased transparency level. The value of an optical band gap energy (E_g^opt) decreased to 2.77 eV for films annealed at 800 °C. Tribological tests revealed reduced scratch resistance with higher annealing temperatures, which was attributed to increased surface roughness and coating removal. Nanoindentation measurements showed a decrease in hardness with annealing temperature, attributed to changes in crystallite size and surface morphology. This comprehensive analysis of TiO₂ thin-film coatings showed that the post-process annealing should be carefully controlled for films used in optoelectronic applications.

Go to article

Authors and Affiliations

Agata Obstarczyk

e-mail:

ORCID:

Ewa Mańkowska

e-mail:

ORCID:

Wiktoria Weichbrodt

e-mail:

ORCID:

Paulina Kapuścik

e-mail:

ORCID:

Wojciech Kijaszek

e-mail:

ORCID:

Michał Mazur

e-mail:

ORCID:

Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science & Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw, Poland

4 Magnetron sputtered silicon thin films for solar cell applications

Marek Szindler , Magdalena M. Szindler , Krzysztof Lukaszkowicz , Krzysztof Matus , Paweł Nuckowski

Opto-Electronics Review | 2024 | 32 | 4 | e151992 | DOI: 10.24425/opelre.2024.151992

Keywords: surface engineering thin films magnetron sputtering silicon solar cells

Download PDF Download RIS Download Bibtex

Abstract

One of the important directions of research in photovoltaics is the development of new thin-film technology, which can replace the currently used, more expensive bulk silicon technology. The article discusses the findings from research focused on optimizing the parameters for the deposition of silicon thin films with P-type electrical conductivity for applications in photovoltaics. The growth rate was determined depending on the change in substrate temperature using reflectometry and the influence of deposition time on optical properties was determined using UV/VIS spectroscopy. Photovoltaic structures were made on substrates with an ITO layer and their electrical parameters were measured. The authors applied the magnetron sputtering method to deposit the layers, selecting it over the commercially used the chemical vapor deposition (CVD) method. This replacement could alleviate the necessity for high temperatures and broaden the potential applications of thin-film solar cells.

Go to article

Authors and Affiliations

Marek Szindler

e-mail:

ORCID:

Magdalena M. Szindler

e-mail:

ORCID:

Krzysztof Lukaszkowicz

e-mail:

ORCID:

Krzysztof Matus

e-mail:

ORCID:

Paweł Nuckowski

Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, ul. Towarowa 7, 44-100 Gliwice, Poland
Department of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland
Materials Research Laboratory, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

5 Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors

Dawid Jarosz , Ewa Bobko , Małgorzata Trzyna-Sowa , Ewa Przeździecka , Marcin Stachowicz , Marta Ruszała , Piotr Krzemiński , Anna Juś , Kinga Maś , Renata Wojnarowska-Nowak , Oskar Nowak , Daria Gudyka , Brajan Tabor , Michał Marchewka

Opto-Electronics Review | 2024 | 32 | 4 | e152620 | DOI: 10.24425/opelre.2024.152620

Keywords: gallium arsenide gallium antimonide molecular beam epitaxy heteroepitaxy

Download PDF Download RIS Download Bibtex

Abstract

The aim of this work was to improve the quality of the GaSb buffer layers on GaAs substrates using the molecular beam epitaxy (MBE) technology. The high quality of the GaSb buffer layers is one of the most important elements enabling the synthesis of good quality of type II superlattices (T2SL) structures for infrared applications. The main challenges in this regard are: compensation of the difference in lattice constants between GaAs and GaSb and obtaining the highest achievable surface quality of the final GaSb layer. In the literature, many authors describe different techniques to obtain the best quality of a GaSb buffer layer. In this work, we present the results of HRXRD, AFM, TOF-SIMS, SEM, and Nomarski optical microscope measurements obtained for 2 μm thick GaSb buffer layers. The GaSb layers are made according to different techniques and these results are compared with a GaSb buffer construction technique according to our own technology. During the processes, we also obtained an unintentional structure of one of the buffer layers, which allowed us to obtain very good results in terms of surface structure and crystallographic quality where FWHM in ω_RC scan was equal to 138 arcsec and RMS 0.20 nm proving that there is still a lot of work to be done in this area.

Go to article

Authors and Affiliations

Dawid Jarosz

e-mail:

ORCID:

Ewa Bobko

e-mail:

ORCID:

Małgorzata Trzyna-Sowa

e-mail:

ORCID:

Ewa Przeździecka

e-mail:

ORCID:

Marcin Stachowicz

e-mail:

ORCID:

Marta Ruszała

e-mail:

ORCID:

Piotr Krzemiński

e-mail:

ORCID:

Anna Juś

e-mail:

ORCID:

Kinga Maś

e-mail:

ORCID:

Renata Wojnarowska-Nowak

e-mail:

ORCID:

Oskar Nowak

Daria Gudyka

Brajan Tabor

Michał Marchewka

e-mail:

ORCID:

Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

6 Direct characterisation of AM-to-PM phenomena in fast Si and InGaAs photod